| Allicdata Part #: | 497-16930-2-ND |
| Manufacturer Part#: |
STD8N60DM2 |
| Price: | $ 0.46 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | N-CHANNEL 600 V, 0.26 OHM TYP., |
| More Detail: | N-Channel 600V 8A (Tc) 85W (Tc) Surface Mount DPAK |
| DataSheet: |  STD8N60DM2 Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.46000 |
| 10 +: | $ 0.44620 |
| 100 +: | $ 0.43700 |
| 1000 +: | $ 0.42780 |
| 10000 +: | $ 0.41400 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 85W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 375pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| Series: | MDmesh™ DM2 |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STD8N60DM2 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is a single device. This type of transistor features high performance and low gate charge, making it an ideal choice for many applications.
The most important feature of the STD8N60DM2 is its low on-state resistance or RDS(on), which is low enough for switching operations at the low voltage of 8V. It also has a wide static drain-source breakdown voltage of 600V. The STD8N60DM2 uses an international standard package (TO-220F).
The application field of the STD8N60DM2 is diverse. It can be used in high-speed switching, low-noise amplifiers, low-power audio output stages, high-frequency radio circuits, load switching, and in power management units. The device is also suitable for automotive applications and is highly reliable, making it a great choice for use in the industrial sector.
The working principle of the STD8N60DM2 is based on the principle of field effect transistors (FETs). The device is constructed from three layers of semiconductor material. A gate electrode, source and drain contact are connected to the three layers. A positive voltage applied to the gate creates a field effect in the device which results in current flow between source and drain and the transistor is “on”. This current flow can be controlled by controlling the voltage applied to the gate. Therefore, the characteristics of the transistor can be precisely controlled by the voltage at the gate. This allows for efficient switching of the device.
The STD8N60DM2 is an excellent choice for many applications due to its low on-state resistance and wide static drain-source breakdown voltage. The device is also highly reliable, making it a great option for use in the industrial sector. The device is also capable of efficient switching operations, making it a great choice for digital and analog applications. Overall, the STD8N60DM2 is a great choice for many applications due to its high performance and low gate charge.
The specific data is subject to PDF, and the above content is for reference
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