| Allicdata Part #: | 497-10958-2-ND |
| Manufacturer Part#: |
STD8NM50N |
| Price: | $ 0.64 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 500V 5A DPAK |
| More Detail: | N-Channel 500V 5A (Tc) 45W (Tc) Surface Mount DPAK |
| DataSheet: | STD8NM50N Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.64000 |
| 10 +: | $ 0.62080 |
| 100 +: | $ 0.60800 |
| 1000 +: | $ 0.59520 |
| 10000 +: | $ 0.57600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 364pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 790 mOhm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STD8NM50N is an N-channel, dual-gate MOSFET. The MOSFET is commonly used in digital circuits, as well as in radio and switch-mode power supplies. It is a high-current component with an efficient power-handling ability that makes it useful in many applications.
Features
- Low on-state resistance of less than 2 ohms
- High current capacity for switching loads of up to 8 amps
- Excellent linearity despite high input frequencies
- Excellent shock and vibration ratings
- Leakage current of less than one microamp
Application Field
The STD8NM50N is suitable for a wide range of applications, including high-load digital circuits and low-noise switch-mode power supplies. It is widely used in professional audio equipment and instrumentation, in particular for its low noise and high current-handling capabilities. It is also widely used in motor controllers and servo systems, as well as in consumer electronics and automotive applications, such as anti-lock brakes and power windows.
Working Principle
The STD8NM50N’s working principle is similar to other FETs and MOSFETs. It is an energy-efficient component that uses a pair of gate-controlled channels, one for the input and the other for the output. The output is directly linked to the input, so that a change in the input voltage is immediately transmitted to the output. The device is mainly used to switch loads between high and low states, and is particularly useful for switching high currents.
The device works by using the input voltage to create an electric field. The electric field then pushes a current through the device and into the output. When the input voltage is applied, the MOSFET will switch on and a current will flow to the output. When the input is removed, the electric field will collapse and the current will be diverted away from the output, leading to the output voltage becoming close to zero. This is the basic mechanism behind the switching ability of the MOSFET.
Limitations
The STD8NM50N is not suitable for applications where high frequency and low noise are important. It is also not suitable for applications that are sensitive to power spikes and fast switching, such as sensitive analog circuits.
Conclusion
The STD8NM50N is a versatile MOSFET and is suitable for a wide range of applications, including digital circuits, switch-mode power supplies, and audio equipment. It is capable of switching high currents and is relatively energy-efficient. However, it is not suitable for all applications, and should only be used when the limitations are taken into consideration.
The specific data is subject to PDF, and the above content is for reference
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STD8NM50N Datasheet/PDF