STD85N10F7AG

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The STD85N10F7AG is a low power and high-efficiency N-channel ultra-low gate-charge MOSFET, with a logic level gate drive, which is an excellent choice when used as a pull-down device in medium voltage applications served by a 3.3 Volt low voltage control signal source. In short, the STD85N10F7AG is a dual-in-line package for use in a wide range of medium voltage applications, depending on its application field and working principle.

The STD85N10F7AG is designed specifically for medium voltage applications, such as high efficiency and low power current sensing and switch mode power supplies (SMPSs). The STD85N10F7AG MOSFETs include high current and high frequency applications with the widest range offered, such as motor control, lighting, medical and computer control systems.

The STD85N10F7AG features an integrated ESD protection diode that allows the device to operate in a high frequency environment, as well as an enhanced On-resistance overdrive capability that enables the device to operate at low gate drive voltage. The low gate drive voltage helps to conserve power while providing precise control.

The off-state resistance eventually depends on the area of the channel and the length of the gate. This MOSFET has a low on-state resistance which is due to a well-designed channel, enabling it to handle high switching frequencies and still maintain low losses. It has a low gate-charge that helps to minimize its power consumption.

The operation of the STD85N10F7AG is based on a saturated mode conduction mechanism. The Drain current will increase as the applied voltage between Gate and Source voltage increases, but with an increase of Source-Drain resistance due to the increased length of the channel. The gate capacitance at the Gate-source junction is also low, which reduces the static power consumption. The STD85N10F7AG can be used in a wide range of medium voltage applications where the dissipation is below 8W.

The STD85N10F7AG is well suited for use in medium voltage applications requiring low on-state resistance, a low gate-charge and fast switching capability. It is especially suitable for applications that rely on low-voltage control signals such as 3.3 Volt logic-level devices. Its tight on-resistance and low gate-charge make it an excellent choice for low power and high efficiency applications, such as motor control, lighting, medical and computer control systems.

The STD85N10F7AG has its own unique set of application fields and working principles. It is a low power, high-efficiency N-channel ultra-low gate-charge MOSFET, with a logic level gate drive. It is designed to be used in medium voltage applications such as motor control, lighting, medical and computer control systems, because of its low-gate charge and fast-switching capability that make it well suited for those applications. This device has a low on-state resistance due to its well-designed channel, and is capable of handling high-frequency applications with minimal losses.

The STD85N10F7AG is a superb choice for medium voltage applications requiring low on-state resistance, low gate-charge and fast switching capability. Its efficiency and low power consumption ensures that it will remain an excellent choice for years to come.

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