
Allicdata Part #: | 497-13942-2-ND |
Manufacturer Part#: |
STD80N6F6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V DPAK |
More Detail: | N-Channel 60V 80A (Tc) 120W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7480pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 122nC @ 10V |
Series: | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD80N6F6 is a N-channel enhancement-mode Field Effect Transistor (FET). It is built on a 5µm gate length high voltage silicon-on-insulator (SOI) process developed by STMicroelectronics. The ultra-low on-resistance of the STD80N6F6 makes it suitable for high efficiency power management applications such as digital power supplies and motor drivers, where minimal power dissipation is important. It is typically used as either a low-side switch or a high-side switch in switching circuits where VGSs are up to 800V.
The working principle of the STD80N6F6 is in concert with other FETs: when a voltage is applied between the gate-source (VGS) pins, it creates a Reverse Bias PN Junction between the N-type source drain. This junction then behaves like a Variable Resistor, with its conductance determined by the magnitude of the applied VGS. When the VGS reaches its threshold voltage, the FET is said to have "Turned On", resulting in a large conduction between source and drain.
The STD80N6F6 has many different types of applications. It is most commonly used as a switch in power management applications such as DC-DC converters and motor drivers, due to its high breakdown voltage and low on-resistance. It is also frequently used in other high voltage applications such as lighting systems and HVAC systems, where its low on-resistance helps minimize power dissipation. The STD80N6F6 is also oftentimes used as a device for Protection and Control, due to its high gate-source voltage rating and its ability to operate at high frequencies.
In summary, the STD80N6F6 is a N-channel enhancement-mode Field Effect Transistor that is well suited for applications requiring high voltage and low power dissipation, due to its ultra-low on-resistance. It is commonly used as a switch in power management applications such as DC-DC converters and motor drivers, as well as other applications such as lighting systems and HVAC systems. It is also used in Protection and Control applications since it is capable of handling high gate-source voltages and high frequencies.
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