STD80N6F6 Allicdata Electronics
Allicdata Part #:

497-13942-2-ND

Manufacturer Part#:

STD80N6F6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V DPAK
More Detail: N-Channel 60V 80A (Tc) 120W (Tc) Surface Mount DPA...
DataSheet: STD80N6F6 datasheetSTD80N6F6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STD80N6F6 is a N-channel enhancement-mode Field Effect Transistor (FET). It is built on a 5µm gate length high voltage silicon-on-insulator (SOI) process developed by STMicroelectronics. The ultra-low on-resistance of the STD80N6F6 makes it suitable for high efficiency power management applications such as digital power supplies and motor drivers, where minimal power dissipation is important. It is typically used as either a low-side switch or a high-side switch in switching circuits where VGSs are up to 800V.

The working principle of the STD80N6F6 is in concert with other FETs: when a voltage is applied between the gate-source (VGS) pins, it creates a Reverse Bias PN Junction between the N-type source drain. This junction then behaves like a Variable Resistor, with its conductance determined by the magnitude of the applied VGS. When the VGS reaches its threshold voltage, the FET is said to have "Turned On", resulting in a large conduction between source and drain.

The STD80N6F6 has many different types of applications. It is most commonly used as a switch in power management applications such as DC-DC converters and motor drivers, due to its high breakdown voltage and low on-resistance. It is also frequently used in other high voltage applications such as lighting systems and HVAC systems, where its low on-resistance helps minimize power dissipation. The STD80N6F6 is also oftentimes used as a device for Protection and Control, due to its high gate-source voltage rating and its ability to operate at high frequencies.

In summary, the STD80N6F6 is a N-channel enhancement-mode Field Effect Transistor that is well suited for applications requiring high voltage and low power dissipation, due to its ultra-low on-resistance. It is commonly used as a switch in power management applications such as DC-DC converters and motor drivers, as well as other applications such as lighting systems and HVAC systems. It is also used in Protection and Control applications since it is capable of handling high gate-source voltages and high frequencies.

The specific data is subject to PDF, and the above content is for reference

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