STD8NM60N-1 Allicdata Electronics
Allicdata Part #:

STD8NM60N-1-ND

Manufacturer Part#:

STD8NM60N-1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 7A IPAK
More Detail: N-Channel 600V 7A (Tc) 70W (Tc) Through Hole I-PAK
DataSheet: STD8NM60N-1 datasheetSTD8NM60N-1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STD8NM60N-1, also known as a "Super-junction MOSFET", is an important device for a number of different applications across many industries. This technology also makes use of sophisticated physical principles and characteristics to provide a powerful device for use in a variety of devices, systems and circuits. In this article, we will discuss the application field and working principles of the STD8NM60N-1.

Applications:

The STD8NM60N-1 is most commonly used in high-performance motor drive systems and power supplies. This type of MOSFET can be used to control the power amplifier in a motor drive or power supply, as well as to control the output current and voltage of an adjustable power supply. Additionally, the STD8NM60N-1 can be used to control the output of a bidirectional motor drive, allowing the motor drive to operate in both directions. This type of MOSFET is also useful in apps that require precise current control.

The various features of the STD8NM60N-1 make it an ideal device for applications that need precise current control. With its high current capability and low on-resistance, the device can be used with low voltage, low-power and high current applications. As such, it is used in a wide range of applications, such as power supplies, servo motors, accumulators, inverters, and high-power UPS systems.

In addition, the STD8NM60N-1 is often employed for applications that require higher reliability, such as high-current and high-power applications, as well as systems that use high-frequency switching controls or require precise current control. As such, the device can be used in applications such as Uninterruptible Power Supplies (UPSs), aircraft and automotive engines, heating, ventilation and air conditioning (HVAC), high-voltage power transmission and distribution, and a wide range of industrial applications.

Working Principles:

The STD8NM60N-1 is a high-performance MOSFET that uses advanced physical principles and characteristics to provide a powerful device that is ideal for high-frequnecy switching, PWM control, and heat dissipation. This type of device is also referred to as “super-junction MOSFET”, which means that it has multiple junctions between the source drains. These junctions allow the device to switch faster and with greater efficiency, making it ideal for applications requiring precise current control.

In addition, the STD8NM60N-1 is designed to work in conjunction with a driver or signal source to perform device switching operations. This type of device is typically controlled by a signal sent by a signal source or driver to control the on-off switching of the device. It is important to note, however, that the driver needs to provide a very fast switching speed in order for the device to perform its switching operations properly.

The STD8NM60N-1 also makes use of a number of other feature, such as high current capability, low on-resistance, high thermal stability, and low reverse recovery time, to provide a high-performance device that is ideal for many applications requiring precise current control. The device also benefits from its high asymmetric channel doping process, which allows the device to switch faster and with greater efficiency.

In conclusion, the STD8NM60N-1 is an important device for a number of different applications across many industries. This type of MOSFET is used in high-performance motor drive systems and power supplies, as well as high-frequency switching controls, power amplifiers, and adjustable power supplies. Additionally, it is also beneficial in applications that require high reliability and precise current control. This technology makes use of sophisticated physical principles and characteristics to provide a powerful device for use in a variety of devices, systems and circuits.

The specific data is subject to PDF, and the above content is for reference

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