STD8NM60ND Allicdata Electronics
Allicdata Part #:

497-8775-2-ND

Manufacturer Part#:

STD8NM60ND

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 7A DPAK
More Detail: N-Channel 600V 7A (Tc) 70W (Tc) Surface Mount DPAK
DataSheet: STD8NM60ND datasheetSTD8NM60ND Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STD8NM60ND is a type of N-channel MOSFET, which stands for the Metal-Oxide-Semiconductor Field-Effect Transistor. It is a single transistor device that can be used in a variety of applications, such as power switches, power amplifiers and signal processing. In this article we will discuss the application field and working principle of this device.

Application Field

The STD8NM60ND is a high-performance MOSFET, designed for power switching applications. It is designed to provide efficient, reliable power when used as an on-off switch. In these applications, it can be used to control the power of low-power DC motors, AC motors, heating elements and other such devices. This MOSFET device can also be used in power amplifiers, where it can control the power output of components such as speakers and devices used for signal processing. Additionally, it can be used for voltage regulation, for devices such as LED lights and liquid crystal displays.

Working Principle

The fundamental operation of the STD8NM60ND is based on the field-effect principle. In this principle, the gate, drain and source are three terminals of the MOSFET, similar to the terminals of a transistor. The gate terminal acts as a control, controlling the flow of electrical current from the source to the drain. The source and drain are connected by a channel of semiconductor material, and when a voltage is applied to the gate, a field is created that affects the resistance of the material in the channel, thus controlling the current flow between the source and drain.

When the gate voltage is applied, electrons are drawn away from the area connecting the source and drain, reducing the number of available electrons in that area. This reduces the conduction of electricity from the source to the drain and allows for current to be regulated and controlled. The channel resistance can be adjusted by applying different voltages to the gate, allowing for varying levels of current flow through the device.

The STD8NM60ND is designed to provide efficient and reliable power and can be used in a variety of applications. It is designed to optimize performance and durability in high power switching applications, allowing it to be used in numerous industrial, automotive, home and consumer electronic applications. With its versatile application field and reliable performance, the STD8NM60ND is a prime choice for power and signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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