
Allicdata Part #: | 497-8775-2-ND |
Manufacturer Part#: |
STD8NM60ND |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 7A DPAK |
More Detail: | N-Channel 600V 7A (Tc) 70W (Tc) Surface Mount DPAK |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STD8NM60ND is a type of N-channel MOSFET, which stands for the Metal-Oxide-Semiconductor Field-Effect Transistor. It is a single transistor device that can be used in a variety of applications, such as power switches, power amplifiers and signal processing. In this article we will discuss the application field and working principle of this device.
Application Field
The STD8NM60ND is a high-performance MOSFET, designed for power switching applications. It is designed to provide efficient, reliable power when used as an on-off switch. In these applications, it can be used to control the power of low-power DC motors, AC motors, heating elements and other such devices. This MOSFET device can also be used in power amplifiers, where it can control the power output of components such as speakers and devices used for signal processing. Additionally, it can be used for voltage regulation, for devices such as LED lights and liquid crystal displays.
Working Principle
The fundamental operation of the STD8NM60ND is based on the field-effect principle. In this principle, the gate, drain and source are three terminals of the MOSFET, similar to the terminals of a transistor. The gate terminal acts as a control, controlling the flow of electrical current from the source to the drain. The source and drain are connected by a channel of semiconductor material, and when a voltage is applied to the gate, a field is created that affects the resistance of the material in the channel, thus controlling the current flow between the source and drain.
When the gate voltage is applied, electrons are drawn away from the area connecting the source and drain, reducing the number of available electrons in that area. This reduces the conduction of electricity from the source to the drain and allows for current to be regulated and controlled. The channel resistance can be adjusted by applying different voltages to the gate, allowing for varying levels of current flow through the device.
The STD8NM60ND is designed to provide efficient and reliable power and can be used in a variety of applications. It is designed to optimize performance and durability in high power switching applications, allowing it to be used in numerous industrial, automotive, home and consumer electronic applications. With its versatile application field and reliable performance, the STD8NM60ND is a prime choice for power and signal processing applications.
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