STD8N80K5 Allicdata Electronics
Allicdata Part #:

497-13643-2-ND

Manufacturer Part#:

STD8N80K5

Price: $ 1.37
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 800V 6A DPAK
More Detail: N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPA...
DataSheet: STD8N80K5 datasheetSTD8N80K5 Datasheet/PDF
Quantity: 1000
1 +: $ 1.37000
10 +: $ 1.32890
100 +: $ 1.30150
1000 +: $ 1.27410
10000 +: $ 1.23300
Stock 1000Can Ship Immediately
$ 1.37
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD8N80K5 transistor is a field effect power transistor (FET) manufactured by STMicroelectronics. It is a three-terminal device with an insulated-gate field-effect channel, operated in enhancement-mode (normally-off). This is an N-channel MOSFET with an average drain current (rather than pulsed drain current) rating of 8 amperes and a drain-source voltage rating of 800 volts.

The STD8N80K5 transistor is used in a variety of applications including the following:

  • High-frequency switching and amplifier circuits
  • DC-DC converters
  • Switched-mode power supplies
  • High-voltage rectifiers
  • High-voltage/current amplifiers
  • High-power converters and choppers

The STD8N80K5 transistor is composed of an insulated gate surrounded by a ceramic substrate and two silicon layers, a source and a drain. A metal layer is also used to ensure good contact between the two layers. The metal layer is also used to control the electrical parameters of the transistor.

The working principle of the transistor is based on the principle of charge transfer between source and drain electrodes. The source is connected to a negative voltage which causes electrons to stream from the source to the drain. The gate insulator on the transistor has a variable resistance depending on the voltage applied to it. By controlling the voltage on the gate, the resistance of the insulator can be adjusted and the current flowing through the drains can be controlled.

The STD8N80K5 is an N-channel MOSFET , meaning that electrons flow from the source to the drain. The gate resistance is also adjustable, meaning that it is possible to perform a wide range of sound and power control functions. The maximum drain current of 8 amperes and the 800 volt drain-source voltage rating mean that this transistor is able to handle considerable power loads.

The STD8N80K5 has a variety of uses, from high-powered switch-mode power supplies and high-frequency switching to high-voltage/current amplifiers. The device provides excellent performance in a variety of applications, and its adjustable gate resistance makes it an ideal choice for sound, power, and current control.

The specific data is subject to PDF, and the above content is for reference

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