
Allicdata Part #: | 497-13643-2-ND |
Manufacturer Part#: |
STD8N80K5 |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 800V 6A DPAK |
More Detail: | N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.37000 |
10 +: | $ 1.32890 |
100 +: | $ 1.30150 |
1000 +: | $ 1.27410 |
10000 +: | $ 1.23300 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STD8N80K5 transistor is a field effect power transistor (FET) manufactured by STMicroelectronics. It is a three-terminal device with an insulated-gate field-effect channel, operated in enhancement-mode (normally-off). This is an N-channel MOSFET with an average drain current (rather than pulsed drain current) rating of 8 amperes and a drain-source voltage rating of 800 volts.
The STD8N80K5 transistor is used in a variety of applications including the following:
- High-frequency switching and amplifier circuits
- DC-DC converters
- Switched-mode power supplies
- High-voltage rectifiers
- High-voltage/current amplifiers
- High-power converters and choppers
The STD8N80K5 transistor is composed of an insulated gate surrounded by a ceramic substrate and two silicon layers, a source and a drain. A metal layer is also used to ensure good contact between the two layers. The metal layer is also used to control the electrical parameters of the transistor.
The working principle of the transistor is based on the principle of charge transfer between source and drain electrodes. The source is connected to a negative voltage which causes electrons to stream from the source to the drain. The gate insulator on the transistor has a variable resistance depending on the voltage applied to it. By controlling the voltage on the gate, the resistance of the insulator can be adjusted and the current flowing through the drains can be controlled.
The STD8N80K5 is an N-channel MOSFET , meaning that electrons flow from the source to the drain. The gate resistance is also adjustable, meaning that it is possible to perform a wide range of sound and power control functions. The maximum drain current of 8 amperes and the 800 volt drain-source voltage rating mean that this transistor is able to handle considerable power loads.
The STD8N80K5 has a variety of uses, from high-powered switch-mode power supplies and high-frequency switching to high-voltage/current amplifiers. The device provides excellent performance in a variety of applications, and its adjustable gate resistance makes it an ideal choice for sound, power, and current control.
The specific data is subject to PDF, and the above content is for reference
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