STD8NM60N Allicdata Electronics
Allicdata Part #:

497-7977-2-ND

Manufacturer Part#:

STD8NM60N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 7A DPAK
More Detail: N-Channel 600V 7A (Tc) 70W (Tc) Surface Mount DPAK
DataSheet: STD8NM60N datasheetSTD8NM60N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STD8NM60N is a super-junction MOSFET which belongs to the family of JEDEC standard through-hole type MOSFETs. It offers high and fast switching performance, is designed for high current handling, and has a wide voltage range of 600V. Despite being a through-hole MOSFET, it can also be used in a wide range of applications such as motor control, automotive and power management and as power switches, rectifiers and regulators.The properties of the STD8NM60N make it an ideal choice for applications that require high power efficiency and fast switching speeds. Its low on-resistance, low gate charge and fast switching time are all beneficial when applying it in these types of circuits. In addition, its relatively small size compared to the alternatives makes it great for applications where space is a critical factor.The STD8NM60N is based on super-junction technology (SJT). This technology is used to reduce the on-resistance of MOSFETs while simultaneously providing a low gate charge, resulting in high current switching.The super junction in a MOSFET is a combination of two different lengths of adjacent junctions in which the electrons are forced to travel through two different junctions in different directions. This process increases the number of electrons which can flow through the device. Instead of having only two junctions in the device, the super junction has a number of junctions, thus allowing for more electrons to flow through the device.The working principle of the STD8NM60N is based on the same principles. Electrons can flow from the source to the drain, when a voltage is applied to the gate. This voltage acts on the super-junction, which forces the current to pass through a number of different junctions. This reduces the total resistance of the device, resulting in higher current flow.The main application fields of the STD8NM60N are power switching, rectifiers, regulators, motor controllers and power management. Due to its high current handling capabilities and low on-resistance, it is an ideal choice for high-power applications. Its fast switching speed and its relatively small size make it suitable for applications that require space-saving solutions.In conclusion, the STD8NM60N is an excellent choice for applications that require high-power efficiency and fast switching speeds. Its advantages are its low on-resistance, low gate charge and fast switching time, as well as its relatively small size. It is suitable for applications such as power switching, rectifiers, regulators, motor controllers, and power management.

The specific data is subject to PDF, and the above content is for reference

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