STGB4M65DF2 Allicdata Electronics
Allicdata Part #:

497-16964-2-ND

Manufacturer Part#:

STGB4M65DF2

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRENCH GATE FIELD-STOP IGBT, M S
More Detail: IGBT Trench Field Stop 650V 8A 68W Surface Mount D...
DataSheet: STGB4M65DF2 datasheetSTGB4M65DF2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.32248
2000 +: $ 0.30098
5000 +: $ 0.28665
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Power - Max: 68W
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 133ns
Test Condition: 400V, 4A, 47 Ohm, 15V
Td (on/off) @ 25°C: 12ns/86ns
Gate Charge: 15.2nC
Input Type: Standard
Switching Energy: 40µJ (on), 136µJ (off)
Series: M
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Current - Collector Pulsed (Icm): 16A
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Insulated Gate Bipolar Transistor (IGBT) is a semiconductor component that is widely used in many applications. It has two power terminals, two emitter terminals, and two gate terminals. The IGBT can either be a small discrete component or a large integrated circuit (IC).

The STGB4M65DF2 is a single-chip IGBT (SCIGBT) that has an enhancement mode design. It is made of a silicon carbide substrate that is normally switched off. This enhanced mode IGBT has a wide temperature range of -65 to 150 degrees Celsius and can operate at voltages up to 600V and current ratings up to 25A. This particular IGBT has the capability to handle high-frequency switching frequencies up to 20kHz, making it ideal for high-speed applications.

IGBTs are used in a wide range of applications, such as power supplies, motor drives, drivetrains, and robotics. This particular IGBT can be used in power switching applications, as well as for high-frequency inverters, resonant DC/DC converters, and switching power supplies. This single-chip IGBT is designed to offer high speed, low power consumption, and low voltage drop under full load. Due to its temperature range and voltage/power ratings, this device is very suitable for high power applications.

The working principle of the STGB4M65DF2 is based on the conduction of electrons through a broad resistance channel created in the silicon carbide substrate. When the gate terminal receives a positive voltage, electrons are injected into the resistance channel and the IGBT is turned on. The electrical current then flows from the emitter to the collector, making the IGBT conductive. When the gate voltage is removed, the injected electrons are removed and the IGBT turns off. This is known as the "OFF" state.

The STGB4M65DF2 is a high-performance IGBT that can be used in a wide variety of applications. It is designed to be an efficient semiconductor component, offering high speed, low power consumption and low voltage drop under full load. The IGBT has a wide temperature range, making it suitable for use in high power applications, and its capability to handle high frequency switching frequencies makes it ideal for high-speed applications. This single-chip IGBT is an ideal choice for switching power supplies, inverters, DC/DC converters, and other power switching applications.

The specific data is subject to PDF, and the above content is for reference

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