STGB25N40LZAG Allicdata Electronics
Allicdata Part #:

497-17643-2-ND

Manufacturer Part#:

STGB25N40LZAG

Price: $ 0.81
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: POWER TRANSISTORS
More Detail: IGBT 435V 25A 150W Surface Mount D²PAK
DataSheet: STGB25N40LZAG datasheetSTGB25N40LZAG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.73537
Stock 1000Can Ship Immediately
$ 0.81
Specifications
Power - Max: 150W
Supplier Device Package: D²PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 300V, 10A, 1 kOhm, 5V
Td (on/off) @ 25°C: 1.1µs/4.6µs
Gate Charge: 26nC
Input Type: Logic
Switching Energy: --
Series: Automotive, AEC-Q101
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Current - Collector Pulsed (Icm): 50A
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 435V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The STGB25N40LZAG is a single IGBT (Insulated Gate Bipolar Transistor) product made by STMicroelectronics for industrial applications. It is used for high-efficiency power conversion, motor control, and appliance energy management. It is in a TO-247 package and has a breakdown voltage of 600V. It has a low turn-off soaking current and an on-state voltage of less than 2.2V.

The STGB25N40LZAG features an insulated gate which acts as a voltage-controlled switch, turning the device on and off. The IGBT is constructed of two layers of silicon, one lightly doped P-type and one heavily doped N-type. The IGBT has two junctions. One of the junctions is between the two layers of silicon and is referred to as the P-N junction. The other junction is between an isolated gate and the heavily doped N-type layer and is referred to as the gate-emitter junction.

When a low-level on-gate voltage is applied to the IGBT\'s insulated gate, current begins to flow from the collector to the emitter. This forward-biased current creates a voltage drop, or forward voltage, across the device which allows current to flow from the collector to the emitter. This is referred to as the on-state current.

When the on-gate voltage is removed, the IGBT enters a reverse-biased state and the collector-emitter current is cut off, entering a so-called off-state. In this state, the gate-emitter junction is reverse-biased, preventing current flow. This switching capability gives the IGBT advantages over other types of transistors, such as BJTs and MOSFETs.

The STGB25N40LZAG is designed for applications requiring low gate drive currents and high-efficiency power conversion, such as motor control and power switching applications. It can be used in switching applications up to 600 volts and can handle up to 25A current. The device also features a low turn-off soaking current and an on-state voltage of less than 2.2V.

The STGB25N40LZAG is a versatile device, suitable for a wide range of applications in which efficient power conversion, switching, and motor control are required. It provides excellent performance at low voltage and high current levels, making it an ideal choice for applications in the industrial, automotive, and consumer electronics industries.

The specific data is subject to PDF, and the above content is for reference

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