STGB3NC120HDT4 Allicdata Electronics

STGB3NC120HDT4 Discrete Semiconductor Products

Allicdata Part #:

497-11215-2-ND

Manufacturer Part#:

STGB3NC120HDT4

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 1200V 14A 75W D2PAK
More Detail: IGBT 1200V 14A 75W Surface Mount D²PAK
DataSheet: STGB3NC120HDT4 datasheetSTGB3NC120HDT4 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 1.22245
2000 +: $ 1.16424
Stock 1000Can Ship Immediately
$ 1.34
Specifications
Switching Energy: 236µJ (on), 290µJ (off)
Base Part Number: STG*3NC
Supplier Device Package: D²PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 51ns
Test Condition: 800V, 3A, 10 Ohm, 15V
Td (on/off) @ 25°C: 15ns/118ns
Gate Charge: 24nC
Input Type: Standard
Series: PowerMESH™
Power - Max: 75W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Current - Collector Pulsed (Icm): 20A
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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STGB3NC120HDT4 is a single insulated-gate bipolar transistor (IGBT) from Mitsubishi Electric. The transistor is surface-mountable and is suitable for use in power switching applications such as motor speed control, fan speed control, and lighting control, and inverter power supplies. It is a cost-efficient, versatile device which can be used in a variety of applications. In this article, we will explore the field of application and working principle of the STGB3NC120HDT4.

The STGB3NC120HDT4 is a robust and efficient transistor with a high drain-collector breakdown voltage of 15V and a collector current rating of 3A. It is ideal for use in low-to-medium power switching applications, as it can handle up to 30A of peak current. Moreover, the excellent thermal characteristics of the device allows it to be used in high-frequency switching applications, making it suitable for switching circuits with high frequency switching applications such as high-power AC/DC converters.

The STGB3NC120HDT4 is a single insulated-gate bipolar transistor (IGBT) with a fast switching speed and low turn-on voltage. The device has three main connections - gate, collector, and emitter - and works on the principle of voltage-controlled current flow. When a voltage is applied to the gate, the voltage increases enough to turn on the IGBT and current can flow from the collector to the emitter. The gate enables controlled current flow between the collector and the emitter and the current flow is proportional to the input voltage applied to the gate.

The STGB3NC120HDT4 can be used in a variety of motor speed control, fan speed control, lighting control, and inverter power supplies. Its fast switching speed and low turn-on voltage make it ideal for use in switching circuits with high frequency switching applications. It can also be used in high-power AC/DC converters as its excellent thermal characteristics enable it to efficiently handle up to 30A of peak current. Additionally, the transistor is cost-efficient and robust, with a high drain-collector breakdown voltage of 15V and a collector current rating of 3A.

In conclusion, the STGB3NC120HDT4 is a cost-efficient and versatile IGBT suitable for a variety of motor speed control, fan speed control, and inverter power supply applications. It can handle up to 30A of peak current and has a fast switching speed and low turn-on voltage. The transistor works on the principle of voltage-controlled current flow, with current flow being proportional to the voltage applied to the gate. It is an excellent choice for high-frequency switching applications and it is a robust and efficient device with superior thermal characteristics.

The specific data is subject to PDF, and the above content is for reference

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