STGB30H60DLFB Allicdata Electronics
Allicdata Part #:

497-16508-2-ND

Manufacturer Part#:

STGB30H60DLFB

Price: $ 1.02
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRENCH GATE FIELD-STOP IGBT, HB
More Detail: IGBT Trench Field Stop 600V 60A 260W Surface Mount...
DataSheet: STGB30H60DLFB datasheetSTGB30H60DLFB Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.92610
2000 +: $ 0.88200
Stock 1000Can Ship Immediately
$ 1.02
Specifications
Power - Max: 260W
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/146ns
Gate Charge: 149nC
Input Type: Standard
Switching Energy: 393µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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IGBTs, also known as Insulated Gate Bipolar Transistors, are power semiconductor components that operate by being switched on and off in order to provide power output without generating much heat. The STGB30H60DLFB IGBT is a powerful, low-voltage, logic-level MOSFET device designed specifically for power applications.

The STGB30H60DLFB can be used in various applications that require high power switching, such as servo drives, UPS systems, traction systems and renewable energy systems. This device is especially suited for DC/AC application because of its low-voltage design.

The STGB30H60DLFB uses a structure that combines MOS gate control with a level shift power device. This allows the device to operate with a high degree of flexibility and efficiency. The device\'s fast switching speed and control capabilities make it suitable for many motor drive applications.

The STGB30H60DLFB is a single-transistor IGBT. This means that it is composed of a single transistor, typically referred to as a SIPMOS. SIPMOS stands for single implanting and post-metallization process. This technology reduces the complexity of manufacture by eliminating the multiple steps involved with other IGBT structures.

The STGB30H60DLFB works by allowing current to pass through the collector-to-emitter (C-E) junction when the gate-to-emitter junction is triggered by a positive voltage. This positive voltage causes electrons to pass through the gate and form a conductive channel between the collector and the gate. This allows current to flow from the collector to the emitter. When the voltage is reversed, the conductive channel is blocked and the current flow from collector to emitter is stopped.

The STGB30H60DLFB can also be used to provide power supplies for motor applications, such as those found in motor drives, variable speed drives, and wind turbines. This device is a low-voltage, logic-level device, which means that it works with a much lower voltage than other IGBTs. This helps reduce the amount of energy consumed during operation, as well as saving on capital and maintenance costs.

In summary, the STGB30H60DLFB is a powerful, low-voltage, logic-level device designed for power applications. It is a single-transistor IGBT that is suitable for many motor drive applications due to its low voltage and control capabilities. This device can be used to provide power supplies for motor applications, such as those found in motor drives and variable speed drives.

The specific data is subject to PDF, and the above content is for reference

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