STW40N65M2 Allicdata Electronics
Allicdata Part #:

497-15576-5-ND

Manufacturer Part#:

STW40N65M2

Price: $ 4.19
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 32A TO247
More Detail: N-Channel 650V 32A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: STW40N65M2 datasheetSTW40N65M2 Datasheet/PDF
Quantity: 59
1 +: $ 4.19000
10 +: $ 4.06430
100 +: $ 3.98050
1000 +: $ 3.89670
10000 +: $ 3.77100
Stock 59Can Ship Immediately
$ 4.19
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2355pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 10V
Series: MDmesh™ M2
Rds On (Max) @ Id, Vgs: 99 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW40N65M2, a high-end MOSFET produced by Infineon Technologies AG, is a commonly used MOSFET with great utility. It is primarily used in power management and switching applications. The device also has high-frequency operation capabilities, making it suitable for a wide range of applications such as motor control, audio amplifiers, UPSs, and industrial control systems. Additionally, this MOSFET has excellent temperature stability, making it very reliable and effective in all types of conditions. The device is a great choice for anyone who needs a reliable MOSFET for their applications.

A MOSFET or metal oxide semiconductor field-effect transistor is a type of electric device that is used to control current and voltage flow. MOSFETs are used in a variety of applications, ranging from digital logic circuits to radio and television transmitters. The STW40N65M2 is a single n-channel enhancement-mode MOSFET. This means that the STW40N65M2 has an n-channel that is able to increase its conductivity without the additional application of an external voltage. This is what makes them an ideal choice for powering applications that operate in a wide range of temperatures, such as audio amplifiers and UPSs, as well as for higher frequency applications such as motor control.

The STW40N65M2 is a vertical DMOS (Double Diffused Metal Oxide Semiconductor) device that has excellent switching characteristics and a high level of thermal stability. It has a drain-source breakdown voltage of 650 V and is capable of conducting up to 40 A. The gate threshold voltage is 4 V, and the gate-source voltage is 60 V. It also has a on-state resistance of 1.5 Ω. The device has an avalanche energy rating of 550 mJ, making it suitable for applications that require high switching speeds. The STW40N65M2 also has a low threshold voltage, making it suitable for power management applications that require fast switching speeds.

The STW40N65M2 MOSFET operates according to the following principle: when a voltage is applied between the gate and the source of the MOSFET, a current is induced in the channel that is between the source and the drain. This current is proportional to the voltage applied and is controlled and regulated by the gate voltage. The MOSFET can either be switched on or off depending on the gate voltage. This makes it an ideal choice for switching and digital logic applications.

Overall, the STW40N65M2 is a powerful, reliable MOSFET with excellent switching and thermal characteristics. It is a great choice for power management and control applications, as well as for applications that require fast switching speeds. The STW40N65M2 is also well suited for operation in high temperatures, making it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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