Allicdata Part #: | 497-17090-ND |
Manufacturer Part#: |
STW40N90K5 |
Price: | $ 9.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 900 V, 0.110 OHM TYP., |
More Detail: | N-Channel 900V 40A (Tc) 446W (Tc) Through Hole TO-... |
DataSheet: | STW40N90K5 Datasheet/PDF |
Quantity: | 551 |
1 +: | $ 8.85780 |
30 +: | $ 7.44954 |
120 +: | $ 6.84552 |
510 +: | $ 5.83881 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 446W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3260pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 89nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 99 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW40N90K5 is a N-Channel MOSFET which belongs to the Semiconductor Field Effect Transistor (FET) family. It is a three-terminal device with an insulated gate where the electrical current passing through determines the power it can control. The STW40N90K5 is a high-voltage, high-perfomance, low-on-resistance MOSFET. It is widely used in DC, AC power control, switching power supply, inverters, and numerous other applications.
Broadly speaking, the STW40N90K5 works by controlling the voltage and the flow of electrons from the source to the drain. It achieves this by using its three terminals: source, drain, and gate. The source is the entry point for electrons to enter the device, the drain is the exit for electrons leaving the device, and the gate controls the flow of electrons from the source to the drain.
When the gate of the STW40N90K5 is not activated, no current can pass through from the source to the drain as the gate is insulated from both end. Thus, the drain-source is considered to be \'off\' in this state. When the gate is activated with a voltage, the gate forms a channel that allows electrons to travel from the source to the drain. This is the \'on\' state of the drain-source.
The STW40N90K5 is primarily applied in power transition voltage stabilization and control, operating different motors, driving devices such as lamps and speakers, etc. It can support up to 40V and dissipates up to 180W. It also offers low "on" resistance (RDS(on)), meaning that it doesn\'t require large currents to control large loads. Furthermore, the STW40N90K5 can achieve high performance and low power consumption for various electrical projects.
The outstanding characteristics of the STW40N90K5 make it useful in dozens of different applications. It is widely used in DC-DC converters, inverter circuits, high-efficiency switching power supplies, multiple pre-regulators, synchronous rectification circuits, and other applications which require an efficient, accurate and reliable voltage transfer. The STW40N90K5 is suitable for high performance, high speed and low power consumption in a wide range of consumer electronics, motor speed control, AC and DC power control, and load driving applications.
Other practical applications of the STW40N90K5 includes but is not limited to consumer electronics, automotive systems, LED lighting, dimming systems, renewable energy, power supply panels and industrial automation. Its low switching loss and its ability to control high loads make it extremely useful in applications where fast switching, high efficiency and low power consumption are important.
In summary, the STW40N90K5 N-Channel MOSFET is a versatile power semiconductor which offers a wide range of high performance, low power consumption, high switching speed and low "on" resistance. It is suitable for many applications, such as high voltage power supplies, motor speed control, AC and DC power control, and other applications which require an efficient, accurate and reliable voltage transfer.
The specific data is subject to PDF, and the above content is for reference
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