STW40NF20 Allicdata Electronics
Allicdata Part #:

497-5807-5-ND

Manufacturer Part#:

STW40NF20

Price: $ 3.40
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 200V 40A TO-247
More Detail: N-Channel 200V 40A (Tc) 160W (Tc) Through Hole TO-...
DataSheet: STW40NF20 datasheetSTW40NF20 Datasheet/PDF
Quantity: 1000
1 +: $ 3.08700
30 +: $ 2.48262
120 +: $ 2.26202
510 +: $ 1.83167
1020 +: $ 1.54478
Stock 1000Can Ship Immediately
$ 3.4
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 45 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STW40NF20 is a N-channel MOSFET (Metal Oxide Field Effect Transistor). It is a commonly used type of transistor, which is found in amplifiers, logic circuits, and other electronic applications. Its main characteristics are high current handling capability, low RDSon leakage current, high frequency operation, and protection against reverse currents.

An N-channel MOSFET has two terminals: the source and the drain. It also has a third terminal, called the gate, which is used to control the flow of electrical charges between the source and drain. The gate can be either an open circuit or a closed circuit, depending on the type of device. When the gate is open, electrical charges can flow freely between the source and drain, while when the gate is closed, the flow of electrical charges is restricted.

The STW40NF20 is an N-channel MOSFET with a breakdown voltage (VGS) of 20V and an RDSon leakage current of 0.55mOhms. The device is constructed using a silicon-on-insulator (SOI) process, which ensures a tight thermal and electrical connection between the drain and the source. The device has a low RDSon leakage current, which means that it can handle high power levels without dissipating large amounts of heat. This is ideal for high-power applications, such as power supplies and motor control.

The STW40NF20 can be used in two basic operational modes: Normal Code Operation (NCO) and Resonant Code Operation (RCO). In NCO mode, the device exhibits Transconductance characteristics, meaning that the current between the source and the drain depends on the voltage between the gate and the source. In RCO mode, the current between the source and the drain depends on the capacitance between the gate and the drain.

The working principle of the STW40NF20 is based on the fundamental MOSFET mechanism. When an electrical signal is applied to the gate, it creates an inversion region between the source and the drain. This inversion region changes the electrical resistance between the source and the drain, allowing current to flow between them. The amount of current that can flow between the source and drain is directly proportional to the voltage applied to the gate.

The STW40NF20 is most commonly used in high-power applications, such as motor control, power conversion, and high-fidelity audio amplifiers. It is also suitable for low-power applications, such as low-power audio amplifiers, logic circuits, and power converters. The device has a wide range of applications due to its low RDSon leakage current, high frequency operation, and ability to protect against reverse currents. It is an ideal choice for low-power and high-power applications alike.

The specific data is subject to PDF, and the above content is for reference

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