STW45NM50FD Allicdata Electronics
Allicdata Part #:

497-2718-5-ND

Manufacturer Part#:

STW45NM50FD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 45A TO-247
More Detail: N-Channel 500V 45A (Tc) 417W (Tc) Through Hole TO-...
DataSheet: STW45NM50FD datasheetSTW45NM50FD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: FDmesh™
Rds On (Max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STW45NM50FD is a widely used N-channel power MOSFET from SANYO. This MOSFET has a drain current rating of 45A and a drain-source breakdown voltage of 500V.

The STW45NM50FD is a power MOSFET designed for use in DC/DC converters, and other similar power management applications. This MOSFET is available in a TO-247 and TO-220 packages, making it suitable for a variety of hardware and chassis applications.

This MOSFET has a low on-state resistance, making it suitable for use in power management applications requiring low power dissipation and minimal heat generation. The STW45NM50FD also features a low gate threshold voltage and is capable of switching at high frequencies, making it suitable for a wide range of applications.

The STW45NM50FD MOSFET operates based on two principles. The first principle is that of simple bipolar operation, where the MOSFET is designed to function as an insulator when a small gate voltage is applied. When a higher gate voltage is applied, the insulating layer between the source and drain is broken down and current flow between the two is allowed. The second principle is associated with the surface area of the metal-oxide layer, which allows current flow that is proportional to the gate voltage.

The STW45NM50FD is particularly well suited to power management applications because it is capable of handling large load currents of up to 45A and is also capable of switching at high frequencies. It also features a low on-state resistance, making it ideal for use in applications that require low power dissipation and minimal heat generation.

In addition to power management applications, the STW45NM50FD is also suitable for use in motor control circuits, lighting circuits, and other applications where a reliable power MOSFET is needed. It is also suitable for use in audio amplifiers, high-speed switching, and other audio applications.

The STW45NM50FD MOSFET is a robust, reliable, and cost-effective device that is suitable for use in a wide variety of applications. Its low on-state resistance and high power rating make it an ideal choice for use in power management applications, and its small package size makes it suitable for a variety of chassis and hardware applications.

The specific data is subject to PDF, and the above content is for reference

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