STW42N60M2-EP

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The STW42N60M2-EP is a high-performance, high-voltage, n-channel power MOSFET integrated circuit available in an easily mounted surface-mount package. It is a high-speed switching device with excellent switching characteristics and stable operation. Its primary application is in various power electronics applications, such as other switching power supplies, etc. This device can also be used in motor control, power converters, and other high-frequency circuits.

Description

The STW42N60M2-EP is an efficient and reliable high-voltage power MOSFET. It is specially designed for switching tasks and can be used for both switching and synchronized switching operations. The device utilizes the latest BiCMOS technology and can withstand voltages up to 800V for a maximum on-state power up to 15.2W. The STW42N60M2-EP features excellent low on-state and body-diode dV/dt performance, as well as extremely fast switching performance. It also features low internal gate capacitance, making it ideal for high-frequency applications.

Features

• High voltage up to 800V for a maximum on-state power up to 15.2W.
• Low on-state and body diode dV/dt performance.
• High-frequency operation.
• Low gate capacitance.
• Low on-state resistance (RDS(on)) for minimal power loss.

Applications

The STW42N60M2-EP can be used in a variety of power supplies, motor control, power converters, and other high-frequency circuits. It can also be used in applications such as relay drivers, power dissipation circuits, and battery powered applications. As a switching device, it can also be used for synchronous rectification in switch mode power supplies and power converters.

Working Principle

The STW42N60M2-EP is a power MOSFET integrated circuit that operates by using the N-channel MOSFET which consists of two MOS capacitors in parallel. The MOS capacitors act as a switch when a voltage higher than the rated gate threshold is applied across their gate-to-source terminal. The MOS capacitors are controlled by the gate voltage and they increase the current between the source and drain terminal when the gate voltage is higher than the source voltage. The current between the drain and source terminals is proportional to the gate voltage when the voltage is above the threshold voltage of the device.

The STW42N60M2-EP also employs an internal diode which helps reduce the body diode dV/dt performance. The diode is used to beneficially reduce the voltage across the device’s drain and source when the device is in the off-state. The diode helps to dissipate the voltage buildup across the device when the device is switched off and thus helps reduce the peak voltage and current across the device body. This helps to reduce power losses and minimize electromagnetic interference.

The STW42N60M2-EP also features low on-state resistance (RDS(on)) which helps to reduce power losses. The low on-state resistance reduces the voltage drop across the device when in the on-state, thus reducing power losses due to heat. The low gate capacitance is another important feature which enables the switching of the device to occur at high frequency levels.

Conclusion

The STW42N60M2-EP is a high-performance, high-voltage n-channel power MOSFET integrated circuit available in an easily mounted surface-mount package. It is a high-speed switching device with excellent switching characteristics and stable operation, making it ideal for applications such as other switching power supplies, motor control, power converters, and other high-frequency applications. The device features a low on-state resistance and gate capacitance, as well as an internal diode which helps reduce the body diode dV/dt performance, which helps to reduce power losses and minimize electromagnetic interference.

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