STW40N95K5 Allicdata Electronics
Allicdata Part #:

497-15447-5-ND

Manufacturer Part#:

STW40N95K5

Price: $ 10.62
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 950V 38A TO247
More Detail: N-Channel 950V 38A (Tc) 450W (Tc) Through Hole TO-...
DataSheet: STW40N95K5 datasheetSTW40N95K5 Datasheet/PDF
Quantity: 1190
1 +: $ 10.62000
10 +: $ 10.30140
100 +: $ 10.08900
1000 +: $ 9.87660
10000 +: $ 9.55800
Stock 1190Can Ship Immediately
$ 10.62
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
Series: MDmesh™ K5
Rds On (Max) @ Id, Vgs: 130 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 950V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW40N95K5 is a transistor device specifically designed for use in power electronic appliances, motor controls, and other power management applications. It is part of the STW family of transistors and developed by STMicroelectronics. This device is a single field-effect transistor (FET) with a low-gate threshold voltage (VGS(th)) of 4.5V, max drain current of 95A and a maximum drain-source voltage (VDS) of 500V. It is intended for use in high-power, high-speed switching applications, due to its low-capacitive output and very low on-resistance.

The STW40N95K5 is a four-legged power FET with a single transistor body. These four pins are the Gate pin for controlling conduction, the Drain terminal for controlling capacitance, the Source terminal for controlling current, and the Body/Ground terminal for connection to the ground voltage. The Gate pin must be at a higher voltage than the Source to turn on the circuit, while the Drain pin must be at a higher voltage than the Gate to turn off the circuit.

The STW40N95K5 features a corner shape power FET which combines the exceptional performance of the single TMOS FET technology and the low gate charge characteristics of the BMOS FET technology. The STW40N95K5 has ultra-low gate charge, a low RDS(on), and high power density. Its low gate charge reduces switching loss by allowing the driver to switch FET faster. It also has an incredibly small drain-source on-resistance, which minimizes conduction losses and optimizes power efficiency.

Due to its unique combination of features, the STW40N95K5 is suitable for several applications. It is the ideal choice for switching power in high-current and high-frequency applications, such as in switching power supplies, automotive power systems, and industrial motor drives. It is also ideal for applications such as high-voltage MOSFET amplifiers and power switching circuits in broadcast receivers.

The STW40N95K5’s working principle is based on field-effect technology, allowing the device to be more reliable and efficient than conventional transistors. FET technology allows a current to flow when a voltage is applied to the gate of the device, allowing the transistor to be used as a switch. As the voltage applied to the gate increases beyond the threshold voltage (VGS(th)), the device will turn on and start to conduct. As the voltage applied to the gate decreases, the device will start to shut off.

The STW40N95K5 has an integrated temperature shutdown feature that stops conduction if the device’s temperature exceeds a certain value. This protects the device from thermal damage and helps extend its longevity. The device also has an integrated overcurrent protection feature, which stops conduction if the current passing through the device exceeds the specified maximum safe level.

The STW40N95K5 is an ideal transistor device for a variety of power electronic applications due to its exceptional performance, low gate charge, and ultra-low on-resistance. Its unique combination of features allows it to be used for high-current and high-frequency switching applications, as well as for high-voltage MOSFET amplifiers and power switching circuits.

The specific data is subject to PDF, and the above content is for reference

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