STW48N60M2-4

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW48N60M2-4 is a 600V N-channel MOSFET designed for applications requiring high power and low on-state resistance. This device is part of STMicroelectronics\' extended PowerMESH™ portfolio that is specifically designed for advanced high frequency, low loss power switching and synchronous rectification. This article will explain the application field and working principle of the STW48N60M2-4 MOSFET.

Applications

The STW48N60M2-4 offers a low on-state resistance and ultra-low gate charge which makes it suitable for various power switching applications that require improved performance and high frequency switching, such as:

• DC/DC converters
• High current switching
• Power amplifier controls
• High frequency resonant converters
• Uninterrupted power supplies (UPS)
• Switch mode power supplies (SMPS)

Working Principle

The STW48N60M2-4 is a N-channel MOSFET that utilizes an enhanced technology which enables the device to withstand high blocking voltages and enhances the switching characteristics by providing very low internal gate capacitance and gate charge. The device has an intrinsic diode that has a low forward voltage and fast switching times. The MOSFET can also be driven with low gate drive voltages.

The STW48N60M2-4 MOSFET consists of a series of n-type metal-oxide layers formed over a semiconductor. When a positive gate voltage is applied, the electrons in the metal-oxide layers cause the channel to become conductive and current flows through the MOSFET. When the gate voltage is removed, the channel is pinched off and current cannot flow through the MOSFET. The advantage of using an N-channel MOSFET is that it consumes less power than a P-channel MOSFET and it has a higher switching speed.

The STW48N60M2-4 is an enhancement mode device, which means that it needs a positive gate voltage to be applied in order for it to be in the on-state. The drain-source resistance (RDS(on)) of the MOSFET is quite low, which ensures that the device\'s power losses are minimized. Additionally, the MOSFET also has temperature stability, which means that its electrical parameters are less affected by temperature.

In summary, the STW48N60M2-4 is an enhanced N-channel MOSFET with excellent voltage and current handling capabilities, extremely low on-state resistance, and high switching speed. It is designed for applications such as DC/DC converters, high current switching, power amplifier controls, and other high frequency, low loss power switching applications.

The specific data is subject to PDF, and the above content is for reference