STW42N65M5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STW42N65M5 power transistors are members of STMicroelectronics\' renowned PowerMESH™ family of phase-leg insulated gate bipolar transistors (IGBTs).

The STW42N65M5 is a trench-gate, non-punch-through, bipolar N-channel IGBT power transistor. This IGBT combines the fast switching speeds of an insulated gate bipolar transistor (IGBT) and the voltage blocking capability of a power MOSFET. This significantly reduces the system\'s overall size and cost by combining the functions of multiple power transistors into one device.

This N-channel IGBT features a low VCE(sat) for low switching loss and minimized switching times. It also offers excellent thermal stability, voltage blocking capability, and short-circuit withstand times. As a result, the STW42N65M5 is ideal for applications like pulse power, HV DC/DC and inverter and home appliances.

Application Field

The STW42N65M5 is widely used in consumer electronics, consumer appliances, soft and hard start circuits, welders, inverters, AC and DC power supplies, smart grid, AC motor drives, and solar and wind powered systems.

The STW42N65M5 has a low gate charge, low gate resistance, and can be paralleled safely. Also, compared to MOSFETs, the STW42N65M5 allows higher voltage blocking, higher operating temperature and can effectively tolerate surges. This makes it ideal for AC/DC power, robotic motor drives and inverters.

Working Principle

At the heart of the STW42N65M5 is the N-channel trench-gate IGBT, which offers high current carrying capability, low on-state voltage, and fast switching capability. The fundamental working principle of the N-channel IGBT is the same as for an N-channel MOSFET, except the IGBT offers an insulated gate. The insulated gate allows a higher voltage blocking capability, stability, and longer operating times.

An N-channel IGBT connects an electric power source to a load resistance solely through the positive terminal and ground. When the gate voltage applied to the IGBT is less than a certain threshold voltage, the IGBT is off and it behaves like an open switch, not allowing current to flow. When the gate voltage is at or above the threshold voltage, the IGBT is on and current flows from the power source to the load.

The STW42N65M5 is an ideal choice for applications requiring low on-state voltage, high current carrying capability, and fast switching speed. Thanks to the incorporation of the advanced IGBT technology, the STW42N65M5 offers improved efficiency and reduced system size, in comparison to MOSFETs.

The specific data is subject to PDF, and the above content is for reference