Allicdata Part #: | SUD40N02-08-E3-ND |
Manufacturer Part#: |
SUD40N02-08-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 40A TO252 |
More Detail: | N-Channel 20V 40A (Tc) 8.3W (Ta), 71W (Tc) Surface... |
DataSheet: | SUD40N02-08-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 600mV @ 250µA (Min) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 8.3W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2660pF @ 20V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 20A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SUD40N02-08-E3 is a type of MOSFETs (metal oxide semiconductor field effect transistors). This MOSFET type stands out for its low leakage current, low input capacitance and low thermal resistance. The device provides the possibility to compact miniaturized high-efficiency circuit designs, ideal for use in consumer electronics and automotive application.
The SUD40N02-08-E3 is a single channel enhancement mode MOSFET. It is designed with an n-channel and has an integrated gate current limiting/thermal shutdown protection feature. This feature ensures reliable and safe operation of the device when an overload situation occurs. The device is manufactured in planar technology and with extremely small dimensions. The maximum drain source current is rated up to 6 A and its typical PWM switching frequency up to 5 kHz.
The SUD40N02-08-E3 has various applications, ranging from motor control to AC switching, such as the switching of relays and solenoids. The device is particularly suitable for use in high frequency operations. Additionally, it is widely used for the switching of loads and for voltage stabilizing circuits. Furthermore, the SUD40N02-08-E3 can also be used for overvoltage and current protection, as well as for logic level conversion.
The SUD40N02-08-E3 typically operates with a gate-source voltage of 10 V and a drain-source voltage of up to 40 V. The maximum drain current is 6 A and the drain-source on-state resistance is low at 3 mΩ. The power dissipation of the Static Safe Operating Area is up to 80 W. The device operating temperature ranges from -55°C to +150°C.
The working principle of the SUD40N02-08-E3 metal oxide semiconductor field effect transistor is based on the effect of a channel in a metal oxide substrate. By applying a gate-source voltage, the channel forms and enables the flow of electric current from drain to source. Then, in order to cause an intensification of the channel, the gate voltage needs to be increased further.
The SUD40N02-08-E3 metal oxide semiconductor field effect transistor is an advanced device which offers high efficiency, low power consumption and reliable operation in a wide range of applications. Its low gate capacitance and on-resistance make it ideal for use in customer electronic applications, automotive applications and more.
The specific data is subject to PDF, and the above content is for reference
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