SUD45P03-09-GE3 Discrete Semiconductor Products

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The SUD45P03-09-GE3 is an n-channel MOSFET. This component is widely used in various applications ranging from power management to audio solutions and RF design. It is a lateral power MOSFET developed primarily for high voltage, low frequency switching and on-off control in applications such as converter, power supplies, motor control and lighting.

The SUD45P03-09-GE3 are designed for low voltage, high frequency switching and moderate power dissipation. The component has a maximum drain-source voltage of 65V, a maximum drain current of 3.1A and a maximum power dissipation of almost 38W. The component also has a relatively low drain-source on resistance for good conduction efficiency and shortened switch-on times.

The SUD45P03-09-GE3 features an ESD protection diode which increases its robustness and ensures reliable operation. This component is also equipped with the latest SO-8 ‘power-flat’ package which enables it to have excellent thermal performance. This package also allows for easy manufacturing with its 0.5mm pitch feet and provides space savings in the design.

The SUD45P03-09-GE3 is suitable for use in on-off control applications such as DC-DC converters, power supplies, motor controls and lighting. It can also be used in switching applications such as audio solutions and RF design. The component is often used to control power in such applications due to its low drain-source on resistance and low thermal resistance.

The working principle of the SUD45P03-09-GE3 follows an enhancement-mode MOSFET structure where the voltage on its gate controls the flow of current from the drain to the source. When the voltage on the gate increases, the current flow from the drain to the source increases as well. This process is known as the ‘pinched-off’ effect. This occurs due to the effect of the electric field between the gate and the channel region.

The gate is insulated from the drain-source region by the oxide layer. The electric field created when the gate voltage is applied reduces the width of the channel (‘pinched-off’ effect) thus controlling the current flow. As the gate voltage is increased, the current through the channel increases. This phenomenon is known as the ‘transconductance’ of the MOSFET.

The SUD45P03-09-GE3 is a highly versatile MOSFET suitable for use in a variety of applications. Its low drain-source on resistance and low thermal resistance ensures good conduction efficiency and minimized switch-on times. This component is most ideal for use in on-off control and switching applications where low drain-source voltage and moderate power dissipation is required.

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