Allicdata Part #: | SUD40N10-25-T4-E3-ND |
Manufacturer Part#: |
SUD40N10-25-T4-E3 |
Price: | $ 1.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 40A TO252 |
More Detail: | N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface... |
DataSheet: | SUD40N10-25-T4-E3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 1.08211 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta), 136W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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?Application Field and Working Principle of SUD40N10-25-T4-E3
The SUD40N10-25-T4-E3 is a high-power semiconductor device used in high power circuits, specifically a vertical N-channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is used in circuits that require power switching, usually at high voltages and/or high currents. It offers dual level drain-source breakdown voltage, channel-to-drain breakdown voltage, and on-resistance performance characteristics. It is a very fast switching semiconductor device, meaning it can switch electric current at high speeds without generating significant amounts of heat. It can be used for a wide variety of high power applications, such as power supplies, electric motors, and high power switching.
Working Principle of SUD40N10-25-T4-E3
The operation of the SUD40N10-25-T4-E3 is based on the effect of channel-to-drain breakdown voltage, which is the voltage applied to it when the current flowing through it is high. When the drain-source voltage exceeds the threshold voltage, channels of the MOSFET begin to form, which is called inversion. This causes current to be transferred from the source to the drain with less voltage drop and higher power than with a regular transistor. The SUD40N10-25-T4-E3 also has a low on-resistance, meaning it requires less voltage to switch from on-state to off-state and vice versa. This low resistance allows for a faster switching time, making it suitable for high power applications that require quick response times.
Applications of SUD40N10-25-T4-E3
The SUD40N10-25-T4-E3 is suitable for a wide range of high power applications, such as:
- Power supplies
- Switching mode power supplies
- Inverters
- Solar inverters
- Motor drivers
- Robotic control
- DC/AC conversion
- High power, high frequency circuit protection
It can also be used in automotive, industrial, and consumer electronics applications, such as monitors, television sets, smart grids, and audio amplifiers. The device is extremely versatile and can be used in any high power application where fast switching, large drain-source breakdown voltage, and low on-resistance are required.
Conclusion
The SUD40N10-25-T4-E3 is a powerful semiconductor device used in high power applications. It is extremely fast and has a dual level drain-source breakdown voltage, channel-to-drain breakdown voltage, and on-resistance performance characteristics. It can be used in a wide variety of applications, such as power supplies, switching mode power supplies, inverters, solar inverters, motor drivers, robotic control, DC/AC conversion, and high power, high frequency circuit protection. It is a reliable and efficient semiconductor device and is suitable for any high power application where fast switching, large drain-source breakdown voltage, and low on-resistance are required.
The specific data is subject to PDF, and the above content is for reference
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