Allicdata Part #: | SUD45P03-15-E3-ND |
Manufacturer Part#: |
SUD45P03-15-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V TO252 |
More Detail: | P-Channel 30V 4W (Ta), 70W (Tc) Surface Mount TO-... |
DataSheet: | SUD45P03-15-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SUD45P03-15-E3 is a n-channel enhancement mode power field-effect transistor (FET) manufactured by STMicroelectronics, a major supplier of semiconductor devices and related products. The SUD45P03-15-E3 is an industry standard part number and can be used in a variety of applications and operating conditions. It is suited for high frequency power switching and is particularly suitable for battery-supplied consumer electronics applications.
Applications
The SUD45P03-15-E3 is a versatile device which can be used in a wide range of applications. Some of the more common applications are as follows:
- High frequency power switching
- Local area networks
- Consumer electronics such as notebooks, PDAs, and cell phones
- Automotive electronics
- Industrial control systems
- Power conversion and inverters
Working Principle
The SUD45P03-15-E3 is an n-channel enhancement mode power field-effect transistor (FET). This type of transistor is an insulated gate semiconductor device that consists of a source, drain and gate. The gate is insulated from the source and the drain and is used to control the current flow between the source and the drain.
When a voltage is applied to the gate, a conducting channel is formed between the source and the drain. This allows current to flow between the two terminals and the current is determined by the voltage applied to the gate. The FET is normally in an off state and current will only flow when a voltage is applied to the gate.
The SUD45P03-15-E3 is designed to be used as a high-frequency power switch. This means that it can be used to switch power on and off quickly and accurately. The FET can operate from DC up to frequencies of several hundred kHz and can handle currents up to 30A.
The SUD45P03-15-E3 is capable of providing very low on-state resistance, allowing it to be used in high-efficiency power conversion and inverter applications. It can also be used in applications that require low switching noise.
The SUD45P03-15-E3 can also be used in applications that require a high rate of current gain and excellent switching speed. It is suitable for applications where power dissipation is important and can be used in battery-supplied consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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