Allicdata Part #: | SUD45P04-16P-GE3-ND |
Manufacturer Part#: |
SUD45P04-16P-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 36A TO252 |
More Detail: | P-Channel 40V 36A (Tc) 2.1W (Ta), 41.7W (Tc) Surfa... |
DataSheet: | SUD45P04-16P-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 16.2 mOhm @ 14A, 20V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2765pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 2.1W (Ta), 41.7W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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SUD45P04-16P-GE3 is a metal-oxide-semiconductor field effect transistor (MOSFET) designed and manufactured by STMicroelectronics. It is classified as a single transistor, belonging to the family of metal-oxide-semiconductor field effect transistors (FETs) and MOSFETs. This type of transistor amplifies or switches electronic signals, controlling current flow and power dissipation.
The SUD45P04-16P-GE3 MOSFET is a high-voltage, large-current N-channel depletion-mode device. It is specially designed for applications that require high power performance, such as LEDs, LCDs, power MOSFETs and power supplies. Its breakdown voltage is equal to or greater than -175V, and it can dissipate large amounts of power at high temperatures. This device is available in several packages, including TO-220, DPAK and SOT-223.
The SUD45P04-16P-GE3 MOSFET is commonly used in power switching applications, such as in the control of ac motors, heaters and fans. It can also be used to control switching between transistors in a sequence. This device is also ideally suited for high-power amplifier circuits, as it can operate in both enhancement and depletion mode.
The SUD45P04-16P-GE3 MOSFET is unique in its ability to respond in a time-saving manner to the voltage applied to its gate terminal. This makes it suitable for fast response circuits, including data acquisition and logic circuits. As the MOSFET can withstand large current surges, it is also a popular choice for many application fields such as industrial and automotive.
The working principle of the SUD45P04-16P-GE3 MOSFET is based on the fact that when a voltage is applied to its gate terminal, a depletion layer is created between the drain and source. This depletion layer acts like an insulator, preventing current from flowing between the two terminals. The greater the voltage applied to the gate terminal, the wider the depletion layer and the higher the current allowed to flow between the two terminals. As the voltage is reduced, the depletion layer shrinks and the current flow decreases. This is how the SUD45P04-16P-GE3 MOSFET works.
In summary, the SUD45P04-16P-GE3 MOSFET is a single transistor in the family of metal-oxide-semiconductor field-effect transistors (FETs) and MOSFETs. This device is primarily used in high-power switching applications, such as the control of ac motors, heaters and fans, as well as high-power amplifier circuits. It is able to respond quickly to voltages applied to its gate terminal, and can withstand large current surges due to its strong body diode characteristics. The working principle of the SUD45P04-16P-GE3 MOSFET is based on the creation of a depletion layer between the drain and source when a voltage is applied to its gate terminal.
The specific data is subject to PDF, and the above content is for reference
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