SUD45P03-10-E3 Discrete Semiconductor Products

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The SUD45P03-10-E3 is a N-channel enhancement type MOSFET developed for switching applications. It is the ideal choice for high-voltage and power switching applications thanks to its low on-resistance, fast switching speed, and high breakdown voltage. This MOSFET is based on the latest power MOSFET technology, ensuring excellent performance and reliability.

An enhancement type MOSFET is a bipolar device that is composed of two MOSFETs, a pMOSFET and an nMOSFET. The pMOSFET is turned on by applying a positive voltage to its gate, while the nMOSFET is turned on by applying a negative voltage to its gate. This type of device has a much higher on-resistance than a depletion type MOSFET, but it is also more efficient in switching applications.

The SUD45P03-10-E3 is a high-voltage and power switching MOSFET. It has an on-resistance of 0.117 Ohms, a maximum drain-source voltage (VDSS) of 450V, a drain-source current rating (ID) of 10A, and a maximum source-drain voltage (VSD) of 5.5V. It also has a variety of other features, such as a low temperature coefficient and a high-frequency switching capability. The SUD45P03-10-E3 is also quite reliable, with a lifetime of over 20,000h after 7.4M cycles.

The SUD45P03-10-E3 is ideal for a wide range of high-voltage and power switching applications. It can be used in AC/DC converters, DC/DC converters, power supply controllers, motor drivers, and other switching applications that require fast switching speed and low on-resistance. Its low thermal resistance also makes it the perfect choice for applications that require high power dissipation.

The working principle of the SUD45P03-10-E3 is quite simple. When a positive voltage is applied to the gate terminal, the pMOSFET is turned on, allowing current to flow from the drain terminal to the source terminal. When the gate voltage is reduced to a negative voltage, the nMOSFET is turned on, allowing current to flow from the source terminal to the drain terminal. In this manner, the pMOSFET and nMOSFET can be used to alternately pass or block current depending on the gate voltage.

The SUD45P03-10-E3 is a great choice for high-voltage and power switching applications. Its low on-resistance and high breakdown voltage make it the perfect choice for applications that require fast switching speed and reliable operation. Its wide range of features and high-frequency switching capability also make it the ideal choice for applications that require high power dissipation.

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