SUD40N04-10A-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	71W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	10 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SUD40N04-10A-E3 is a MOSFET device that is typically used in a variety of applications. The device is a single type, meaning that it consists of one transistor or MOSFET. The application field of this particular device is extremely broad, as it is used in operations ranging from low side switching to RF switching. Furthermore, its small size, low on resistance and low gate charge enable it to fit in a wide variety of applications.The working principle of the MOSFET device is based on the semiconductor properties of the material used to manufacture the device. The material used in this device is gallium arsenide, which is an excellent semiconductor. Other materials, such as silicon and germanium, are also used in the production of MOSFETs.A MOSFET device operates using the principle of “threshold voltage”. This is the voltage required to turn the device on. When a voltage is applied to the gate of the device, a field-effect is created which attracts electrons to the gate. As the amount of current flowing between the drain and the source increases due to the presence of the field-effect, the device is said to be “on”.The MOSFET device can also be operated in the “off” state. This is whenever the device is not being used or is not being supplied with any power. In this state, the device does not conduct any current and therefore does not consume any electrical energy.When the MOSFET device is used in applications, it must be correctly wired. This is so that it will work correctly and efficiently, as the wrong wiring can cause problems with the device’s operation. The device has a total of four connections: Vss, Vdd, Gate and Source. The two main connections are the Vss (drain) and Vdd (source), while the other two are the Gate and Source connections. Before attempting to use the device, it is necessary to check the wiring configuration.In addition to its small size and low gate charge, the SUD40N04-10A-E3 also has a good on resistance. This is a measure of how well the device can handle current, and is important in applications such as low side switching, where controlling current is important. Furthermore, the device is also able to operate at high temperatures, making it suitable for operating in hot environments.The SUD40N04-10A-E3 MOSFET is an excellent device for both low side and RF switching applications. Its small size, low gate charge and low on resistance make it a versatile and reliable device, while its ability to operate at high temperatures makes it suitable for hot environments. By following the correct wiring procedure and ensuring that the device is correctly connected, the SUD40N04-10A-E3 MOSFET will provide a reliable, efficient and cost-effective switching solution.

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