SUD40N10-25-E3 Allicdata Electronics

SUD40N10-25-E3 Discrete Semiconductor Products

Allicdata Part #:

SUD40N10-25-E3TR-ND

Manufacturer Part#:

SUD40N10-25-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 100V 40A TO252
More Detail: N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface...
DataSheet: SUD40N10-25-E3 datasheetSUD40N10-25-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
FET Feature: --
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The SUD40N10-25-E3 is a single N-channel Enhancement Mode Field Effect Transistor (MOSFET). It is designed to provide superior switching performance and enhanced immunity to noise in various consumer and communications applications. The SUD40N10-25-E3 is especially useful for applications requiring very low gate drive. The device is manufactured using high voltage Trench Gate Field Stop technology, allowing for excellent switching and ruggedness performance.

The working principle of the SUD40N10-25-E3 is based on one of the most basic principles of physics: the flow of electrons through a conductor. When a voltage is applied to the gate of the MOSFET, it creates an electric field between the gate and the source. This electric field attracts free electrons, which then flow from the source to the drain, allowing current to pass through the transistor. The stronger the electric field, the more closely attracted electrons will be, and the greater the amount of current that will flow through the transistor.

The SUD40N10-25-E3 has a variety of applications, including DC/DC converters, power management, audio amplifiers, and many industrial systems. In DC/DC converters, the low gate drive requirement of the SUD40N10-25-E3 allows for smaller sized converters, saving on efficiency and cost. In power management systems, the low gate drive capability allows for faster switching, higher efficiency, and reduced electromagnetic interference. The device is also suitable for use in audio power amplifiers, enhancing sound quality by reducing the noise level in electronic components. The SUD40N10-25-E3\'s broad application spectrum make it an ideal choice for many industrial applications, such as computing, medical, automotive, and consumer electronics.

Due to its low gate drive requirement, superior immunity to noise, and superior switching performance, the SUD40N10-25-E3 is an ideal choice for many consumer and communications applications. Additionally, its ability to operate in a wide range of temperatures, from -55°C to +150°C, enables it to be used in a variety of different environments and industries. This makes the SUD40N10-25-E3 an attractive option for many industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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