SUD40N08-16-E3 Allicdata Electronics

SUD40N08-16-E3 Discrete Semiconductor Products

Allicdata Part #:

SUD40N08-16-E3TR-ND

Manufacturer Part#:

SUD40N08-16-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 80V 40A TO252
More Detail: N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface ...
DataSheet: SUD40N08-16-E3 datasheetSUD40N08-16-E3 Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SUD40N08-16-E3 FETs, MOSFETs, and Single transistors are among the most commonly used components in electronic purposes. These components are widely used in many industries, from automotive electronics to medical devices and other industrial applications. In this article, we’ll take a look at the application fields and working principle of the SUD40N08-16-E3 component.

The SUD40N08-16-E3 component is a general-purpose insulated-gate bipolar transistor (IGBT), which is mainly used for high voltage and high current applications. It is usually employed in robotics, automotive power control, drives, industrial systems and other motor-control applications. It is also used in switched-mode power applications, such as motor speed control, power factor correction and solid-state lighting.

The working principle of an IGBT is based on an integrated gate field-effect transistor (IGFET), which comprises of two junctions. The first junction consists of an insulated gate (IG) and a p-channel. When the gate voltage reaches a specified threshold, it forms an inversion layer on the surface of the device, which is used to control the conductivity of the device. The second junction consists of another insulated gate and a n-channel. When the voltage on this junction is increased, the current flow increases. Thus, the device can be used to control the current in an electrical circuit.

The main feature that makes the SUD40N08-16-E3 component unique is the combination of low on-resistance and fast turn-off, which allows it to be used in high-speed switching applications. The SUD40N08-16-E3 component has an on-resistance (RDS(on)) of 0.8 mΩ and a maximum turn-off-current (ICl(OFF)) of 5000 A. This low on-resistance and fast turn-off enables the component to be used in a variety of applications, such as motor-control, power factor correction and switched-mode power applications.

The SUD40N08-16-E3 component is also distinguished by its high voltage and current ratings. It has an operating voltage range of 600 V-1400 V and a maximum current rating of 16 A. This makes it suitable for applications that require high voltage and current levels, such as high-powered motors or industrial systems.

The SUD40N08-16-E3 component has a very low on-resistance and fast turn-off, which makes it ideal for motor-control and switched-mode power applications. It is also suitable for applications that require high voltage and current levels, such as industrial systems and high-powered motors. Furthermore, the component is characterized by its very low on-resistance and fast turn-off, which makes it an ideal choice for high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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