SUD40N08-16-E3 Discrete Semiconductor Products |
|
Allicdata Part #: | SUD40N08-16-E3TR-ND |
Manufacturer Part#: |
SUD40N08-16-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 80V 40A TO252 |
More Detail: | N-Channel 80V 40A (Tc) 3W (Ta), 136W (Tc) Surface ... |
DataSheet: | SUD40N08-16-E3 Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1960pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SUD40N08-16-E3 FETs, MOSFETs, and Single transistors are among the most commonly used components in electronic purposes. These components are widely used in many industries, from automotive electronics to medical devices and other industrial applications. In this article, we’ll take a look at the application fields and working principle of the SUD40N08-16-E3 component.
The SUD40N08-16-E3 component is a general-purpose insulated-gate bipolar transistor (IGBT), which is mainly used for high voltage and high current applications. It is usually employed in robotics, automotive power control, drives, industrial systems and other motor-control applications. It is also used in switched-mode power applications, such as motor speed control, power factor correction and solid-state lighting.
The working principle of an IGBT is based on an integrated gate field-effect transistor (IGFET), which comprises of two junctions. The first junction consists of an insulated gate (IG) and a p-channel. When the gate voltage reaches a specified threshold, it forms an inversion layer on the surface of the device, which is used to control the conductivity of the device. The second junction consists of another insulated gate and a n-channel. When the voltage on this junction is increased, the current flow increases. Thus, the device can be used to control the current in an electrical circuit.
The main feature that makes the SUD40N08-16-E3 component unique is the combination of low on-resistance and fast turn-off, which allows it to be used in high-speed switching applications. The SUD40N08-16-E3 component has an on-resistance (RDS(on)) of 0.8 mΩ and a maximum turn-off-current (ICl(OFF)) of 5000 A. This low on-resistance and fast turn-off enables the component to be used in a variety of applications, such as motor-control, power factor correction and switched-mode power applications.
The SUD40N08-16-E3 component is also distinguished by its high voltage and current ratings. It has an operating voltage range of 600 V-1400 V and a maximum current rating of 16 A. This makes it suitable for applications that require high voltage and current levels, such as high-powered motors or industrial systems.
The SUD40N08-16-E3 component has a very low on-resistance and fast turn-off, which makes it ideal for motor-control and switched-mode power applications. It is also suitable for applications that require high voltage and current levels, such as industrial systems and high-powered motors. Furthermore, the component is characterized by its very low on-resistance and fast turn-off, which makes it an ideal choice for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SUD42N03-3M9P-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 42A TO252... |
SUD45P03-10-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V TO252P-Ch... |
SUD40N04-10A-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 40A TO252... |
SUD40151EL-GE3 | Vishay Silic... | 0.67 $ | 1000 | MOSFET P-CHAN 40V TO-252P... |
SUD40N02-08-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 40A TO252... |
SUD40N02-3M3P-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 24.4A TO2... |
SUD45P03-15-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V TO252P-Ch... |
SUD45P04-16P-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 40V 36A TO252... |
SUD40N10-25-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 40A TO25... |
SUD45P03-09-GE3 | Vishay Silic... | -- | 8000 | MOSFET P-CH 30V 45A DPAKP... |
SUD40N08-16-E3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 80V 40A TO252... |
SUD40N10-25-T4-E3 | Vishay Silic... | 1.2 $ | 1000 | MOSFET N-CH 100V 40A TO25... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...