Allicdata Part #: | TIP30GOS-ND |
Manufacturer Part#: |
TIP30G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 1A TO220AB |
More Detail: | Bipolar (BJT) Transistor PNP 40V 1A 3MHz 2W Throug... |
DataSheet: | TIP30G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 125mA, 1A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 1A, 4V |
Power - Max: | 2W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | TIP30 |
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A Transistor-Bipolar-Junction-Transistor (BJT) is an electronic device used for controlling and amplifying electrical signals. The TIP30G is one of the widely used BJTs and it is used for a wide range of applications. This article will discuss the application field and working principle of the TIP30G.
TIP30G Application
The TIP30G is a PNP type BJT transistor which are mainly used in power control applications. It is mainly used in low power switch mode applications where low dissipation is desired. The device is also suitable for use in audio amplifiers, light dimmer circuits, and displays which require high speed switching with low current drive. This device offers a wide range of features that make it ideal for various applications. It has a high breakdown voltage, low saturation voltage, and low gate charge which makes it suitable for low power control applications.
TIP30G Working Principle
The TIP30G is a three-terminal device with an emitter, base, and collector. The base terminal is used to control the current flow between the emitter and collector. When a base current is applied, it creates a voltage drop across the base-emitter junction, which in turn causes a current to flow between the emitter and collector. The amount of current flowing through the collector depends on the base current and the current gain of the device. The current gain, or hFE, is a measure of how well the device amplifies the current. In the TIP30G, the hFE is typically in the range of 100 to 500, depending on the device.
The TIP30G also features a very low on-state voltage drop. This voltage drop is the amount of voltage drop across the transistor when it is turned on. In the TIP30G, the on-state voltage drop is typically in the range of 0.2V to 0.5V, depending on the device.
The TIP30G also features a high breakdown voltage. The breakdown voltage is the point at which the transistor starts conducting a large amount of current, often leading to destruction of the device. In the TIP30G, the breakdown voltage is typically in the range of 50V to 75V, depending on the device.
Conclusion
The TIP30G is a widely used BJT transistor, used in a wide range of applications. It is mainly used in power control applications, and is suitable for low power switch mode applications and audio applications due to its high breakdown voltage, low gate charge, and low on-state voltage drop. Its current gain, or hFE, is usually in the range of 100-500, and its breakdown voltage is usually in the range of 50V to 75V. All these features make the TIP30G an ideal choice for various power control applications.
The specific data is subject to PDF, and the above content is for reference
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