TIP35B-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	25A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	4V @ 5A, 25A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 15A, 4V
Power - Max:	3.5W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-218-3
Supplier Device Package:	SOT-93

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TIP35B-S is a type of NPN silicon powered high-power oscillator transistor chip designed for use in a wide variety of applications. It is used for switching, amplifier stages, and as part of an oscillator or linear amplifier. It can also be used in power supplies and low-noise circuits. The TIP35B-S is rated for maximum power dissipation of 10 watts and a peak collector dissipated power of 15 watts.The TIP35B-S is a single bipolar junction transistor (BJT) that provides a low-cost solution to high-voltage applications. It is constructed with a substrate of helium-doped n-type silicon material. It contains four layers of alternating n-type diffusion formed between p-type layers, forming a base-emitter-base-collector structure. Its structure allows it to operate reliably in high-voltage conditions, and its small size makes it popular in portable devices such as pagers and cell phones.Working PrincipleThe working principle of the TIP35B-S is based on the junction created between the n-type and p-type silicon. When a voltage is applied to the base of the transistor, it causes electrons to be attracted from the n-type material toward the p-type material. This creates a space charge in the junction, known as the P-N junction, which limits current flow between the two materials. This effect is known as an “emitter-base” junction.When the voltage applied to the base continues to increase, the electrons become more tightly bound to the p-type silicon, and current flow across the junction is increased. This is known as the “saturation” region, and it allows the transistor to amplify the signal applied to the input.In the “saturation”region, the transistor’s output current is proportional to the input current. It is also direct-coupled, meaning that the input and output voltages are in the same polarity. This allows for high-frequency performance and minimal distortion of the amplified signal.The TIP35B-S is designed to operate within a temperature range of -55 to +150 degrees Celsius. Its maximum power dissipation is limited to 10 watts and its peak collector dissipated power is 15 watts. It has a minimum gain of 100 and a low noise figure of 1.5 dB.ConclusionThe TIP35B-S is a single bipolar junction transistor (BJT) used for high-power oscillators, switching, and amplifiers. Its structure makes it suitable for high-voltage applications, and its small size makes it popular in portable devices. It can withstand temperatures of -55 to +150 degrees Celsius and has a maximum power dissipation of 10 watts and a peak collector dissipated power of 15 watts. It has a minimum gain of 100 and a low noise figure of 1.5 dB.

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