TIP35C Discrete Semiconductor Products |
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Allicdata Part #: | 497-2609-5-ND |
Manufacturer Part#: |
TIP35C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 100V 25A TO-247 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 25A 3MHz 125W Th... |
DataSheet: | TIP35C Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 25A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 5A, 25A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 15A, 4V |
Power - Max: | 125W |
Frequency - Transition: | 3MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
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Transistors are active electronic components whose primary function is to amplify or switch electronic signals and electrical power. One of the most widely used transistors is the TIP35C, a single bipolar junction transistor (BJT). This article will discuss the application fields and working principle of the TIP35C.
The TIP35C is a silicon-based NPN BJT that is capable of carrying up to 3A of continuous collector current, making it suitable for use in power amplifiers, switching circuits, and other linear applications. Its low saturation voltage of 0.9V makes it suitable for use in low-voltage and medium-power applications. It has also been used in frequency-controlled oscillators and current sources. In addition, the TIP35C has a wide range of gain and high-frequency performance.
The TIP35C has an intrinsic base-emitter voltage of 6V, allowing it to be used in applications that require higher voltages. It also has a low maximum base current of 1mA, allowing it to be used in applications that require low base currents. The TIP35C has an efficient thermal design, allowing it to dissipate heat quickly and efficiently. This allows the transistor to operate without overheating, even at high currents.
The TIP35C’s working principle is relatively simple. It uses the movement of electrons and holes across a base-emitter junction to create gain and amplification. The photons or electrons that enter the base region travel across the base-emitter junction and are then pushed through the collector region. As they move through the collector they are amplified, creating a gain. The gain is dependent on the bias of the base current and the current flowing through the collector.
In summary, the TIP35C is an NPN BJT designed to be used in both linear and switching applications. It is suitable for use in power amplifiers, frequency-controlled oscillators, current sources, and other applications that require high gain and low saturation voltage. Its intelligent thermal design ensures that it will not overheat even when used at high currents. Finally, its working principle is relatively simple, using the movement of electrons and holes across a base-emitter junction to create gain and amplification.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TIP34C | STMicroelect... | 0.0 $ | 1000 | TRANS PNP 100V 10A TO-247... |
TIP33C | STMicroelect... | 0.0 $ | 1000 | TRANS NPN 100V 10A TO-247... |
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TIP33B | Central Semi... | 0.0 $ | 1000 | TRANS GENERAL PURPOSE TO-... |
TIP34A | Central Semi... | 0.0 $ | 1000 | TRANS GENERAL PURPOSE TO-... |
TIP34B | Central Semi... | 0.0 $ | 1000 | TRANS GENERAL PURPOSE TO-... |
TIP35A | Central Semi... | 0.0 $ | 1000 | TRANS GENERAL PURPOSE TO-... |
TIP35B | Central Semi... | 0.0 $ | 1000 | TRANS GENERAL PURPOSE TO-... |
TIP36 | Central Semi... | 0.0 $ | 1000 | TRANS GENERAL PURPOSE TO-... |
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TIP36B | Central Semi... | 0.0 $ | 1000 | TRANS GENERAL PURPOSE TO-... |
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TIP35C | STMicroelect... | -- | 1000 | TRANS NPN 100V 25A TO-247... |
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