TIP34C Allicdata Electronics

TIP34C Discrete Semiconductor Products

Allicdata Part #:

497-2603-5-ND

Manufacturer Part#:

TIP34C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS PNP 100V 10A TO-247
More Detail: Bipolar (BJT) Transistor PNP 100V 10A 3MHz 80W Thr...
DataSheet: TIP34C datasheetTIP34C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: 3MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Description

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The TIP34C is a silicon NPN, Darlington power transistor designed for general purpose switching and amplifier applications. It belongs to the Transistors - Bipolar (BJT) - Single category. TIP34C is rated at 10A, 100V, and features complementary outputs.

The TIP34C enables optimal efficiency and provides high power output, with a collector-emitter breakdown voltage of 100V and DC current gain (hFE) of 150. It is usually suitable for medium power switching and amplifier applications because of its high gain and rugged, reliable construction.

This device can be used in many applications, including:

  • Circuit switching and amplifying applications
  • General purpose switching
  • Power supplies operating at frequencies up to 200kHz
  • Driving relays and thyristors
  • Driving DC motors
  • Power amplifier circuits with voltage gain

The TIP34C features an emitter-base voltage of 5V and a maximum collector current of 10A. This device is built with a PNP die process, which reduces power consumption and increases efficiency. In addition, it includes a robust, reliable construction that is ideal for tough operating conditions.

The TIP34C has a variety of features that make it an excellent choice for many applications. It is well suited for both low and medium power circuits, as it has a low on-state voltage drop, low gate control voltages, and high power handling capacities. The TIP34C is designed to operate well in high temperature and high-voltage environments, making it ideal for circuits that require a rugged, reliable device.

The TIP34C circuit is essentially composed of two Darlington-connected transistors operating in common base configuration. When a positive voltage is applied to the base of the first transistor, current begins to flow through the collector to the second transistor, which amplifies the current. This current is then lowered in the collector of the second transistor, which increases the current in the emitter, creating an increased current flow into the base of the first transistor, amplifying its current. This is the principle of operation of the TIP34C, and provides a greater power output than a single transistor can achieve.

In conclusion, the TIP34C is a silicon NPN Darlington power transistor designed for general purpose switching and amplifying applications. It is characterized by its high power output, low on-state voltage drop, and rugged, reliable construction. It is ideally suited for medium power switching and amplifier applications, as it combines low on-state voltage drop with high power handling capacities.

The specific data is subject to PDF, and the above content is for reference

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