TIP32A-BP

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 3A, 4V
Power - Max:	2W
Frequency - Transition:	3MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Base Part Number:	TIP32

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Introduction

TIP32A-BP is a single BJT (Bipolar Junction Transistor) which is widely used in applications such as amplifiers, current mirrors, voltage regulators and switches. It is also suitable for use in audio and video switching applications that require high current gain and low noise operation.

Overview

The TIP32A-BP is a high power BJT transistor featuring an NPN structure, low voltage drop and high current gain. It is typically used as an amplifier or a switch in high current gain applications and can handle up to 6A of continuous current and has a voltage rating of up to 80V. The TIP32A-BP has a typical current gain of 60.

Applications

The TIP32A-BP is commonly used in audio and video switching applications due to its high current gain and low noise operation. It is also suitable for use in circuits for amplifiers, current mirrors, voltage regulators and switches.

Features

The TIP32A-BP has a number of key features that make it suitable for a range of low voltage and high current applications. These features include:- Low power dissipation- Low voltage drop- High current gain, typically 60- High breakdown voltage- Low noise operation- Low distortion- High frequency operation- Operating frequency up to 150 kHz

Working Principle

The TIP32A-BP is a PNP type bipolar junction transistor and is therefore operated with a negative voltage applied to the base. When a negative voltage is applied to the base, it allows electrons to flow through the base region and into the collector. This causes the collector current to increase, which causes the voltage drop across the collector-emitter junction to decrease. As the voltage drop across the collector-emitter junction decreases, more electrons are allowed to flow through the base, further increasing the collector current. This process repeats itself until the transistor is saturated and the voltage drop across the collector-emitter junction is at its lowest possible value. The collector current can then be reduced by decreasing the negative voltage applied to the base.

Conclusion

The TIP32A-BP is a high power BJT transistor which is ideally suitable for use in a range of low voltage and high current applications. It features a low voltage drop and high current gain, making it suitable for use in audio and video switching applications which require high current gain and low noise operation. It also features high frequency operation up to 150 kHz, making it suitable for use in high-speed signal processing circuits.

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