TIP35A

TIP35A is a three-terminal silicon PNP epitaxial-base Darlington transistor which is an ideal choice for applications needing high current gain bandwidth product with low base drive requirements. It is suitable for use in general-purpose switching and amplifier applications, power management applications, and other circuit designs that need medium power dissipation in small packages.

The TIP35A is a Member of the Popular TIP35 Series of Darlington Transistors that are used for general-purpose and power switching applications, etc. It is a power transistor with Collector current rating of up to 8 A and Collector-Emitter voltage rating of up to 80 V. It is fabricated using advanced silicon NPN epitaxial planar process providing gain bandwidth product of up to 200 MHZ and low collector-to-emitter saturation voltage.

TIP35A is an all-around transistor which is preferred for low to medium power applications, such as amplifier configurations, booster and driver circuits. It can also be used in a wide variety of other applications, like digital to analog converters (DACs). Furthermore, it can be used in high power amplifier designs due to its high gain and low noise levels. As it is designed to operate in medium to low power modes and has a low saturation voltage, it is ideal for pre-amplifier and output stages.

The working principle of the TIP35A is quite simple. This bipolar transistor has three terminals, the Emitter, the Base, and the Collector. A potential difference between the Base and the Emitter alters the current between the Collector and the Emitter. When a small current is given to the Base, then as a result, a larger current flows through the Collector and Emitter terminals. This change in current is known as the current gain (Ic/Ib).

The TIP35A is an epitaxial planar device that is encapsulated in a plastic casing with a metal tab that acts as a heat sink to dissipate heat from the package. The Collector and Emitter leads are internally connected it allows for a tight electrical coupling for low to medium current applications. In addition to this, it has a very good power storage capacity due to the special structure in its saturation region. The Collector-Emitter saturation voltage is less than one-eighth of the voltage, which makes the transistor an ideal choice for switching applications.

Overall, TIP35A transistor is highly efficient, reliable and cost-effective. Its wide range of applications include powering any inductive or capacitive loads, wide variety of pulse, audio, or radio frequency application, power management and other circuit designs. As it is designed to operate in medium to low power modes, this device is best suited for pre-amplifier and output stages due to its low base drive requirements, high current gain bandwidth product, and low collector-to-emitter saturation voltage.