TK14A45D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK14A45D(STA4QM)-ND

Manufacturer Part#:

TK14A45D(STA4,Q,M)

Price: $ 1.97
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 450V 14A TO-220SIS
More Detail: N-Channel 450V 14A Through Hole TO-220SIS
DataSheet: TK14A45D(STA4,Q,M) datasheetTK14A45D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
50 +: $ 1.77320
Stock 1000Can Ship Immediately
$ 1.97
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
Description

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A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors come in a variety of types and configurations, but the most commonly used is the field-effect transistor (FET), especially the metal-oxide-semiconductor FET (MOSFET). Among these, the single MOSFET is perhaps the most widely used and versatile of all. The TK14A45D (STA4,Q,M) is one such example of a single MOSFET.

The TK14A45D is a dual N-channel enhancement-mode power MOSFET, produced using the advanced STripFET IV technology, which is designed specifically for low-voltage, high-current applications. It is a versatile MOSFET with unique features such as its low on-resistance, high switching speed, and low capacitance. Other features include a maximum junction temperature of 150°C, an avalanche energy of up to 300mJ, and a maximum drain-source voltage of 40V. All of these make the TK14A45D an ideal choice for power switching and voltage regulation applications.

In its simplest form, a MOSFET operates by using a small electric field to control the movement of electrons within the device. The TK14A45D has a source, drain, and gate which correspond to the three different terminals connected to the device. When a positive voltage is applied to the gate terminal relative to the source, an electric field is generated between the source and drain, which in turn, allows electrons to flow from the source to the drain - that is, it “opens” the device. The magnitude of the current flow is regulated by the magnitude of the gate voltage applied. Conversely, when the gate voltage is reduced to near zero, the electric field is eliminated, and the device “closes”; in other words, electrons can no longer move between the source and drain terminals.

The TK14A45D is commonly used in a variety of applications, including power switching and voltage regulation. Its low on-resistance and high switching speed make it an ideal choice for applications that require precise and fast control of large currents. It is also an excellent choice for high-power DC-DC converters and motor drives. Additionally, it is suitable for use in switching power supplies, voltage regulators, lighting systems, and high-efficiency electrical inverters.

In conclusion, the TK14A45D is an excellent example of a MOSFET which is designed for use in various power switching and voltage regulation applications. It has a low on-resistance and high switching speed, as well as a maximum junction temperature of 150°C, an avalanche energy of up to 300mJ, and a maximum drain-source voltage of 40V. All of these features make the TK14A45D an ideal choice for high-power DC-DC converters, motor drives, switching power supplies, voltage regulators, lighting systems, and high-efficiency electrical inverters.

The specific data is subject to PDF, and the above content is for reference

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