TK14C65W,S1Q Allicdata Electronics
Allicdata Part #:

TK14C65WS1Q-ND

Manufacturer Part#:

TK14C65W,S1Q

Price: $ 2.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 650V 13.7A I2PAK
More Detail: N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole I...
DataSheet: TK14C65W,S1Q datasheetTK14C65W,S1Q Datasheet/PDF
Quantity: 38
1 +: $ 2.17350
Stock 38Can Ship Immediately
$ 2.39
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK14C65W,S1Q is a CMOS N-Channel enhancement-mode field-effect transistors with low-power drive. This type of transistor is also sometimes referred to as a FET or MOSFET, both of which are essentially the same device. The TK14C65W,S1Q is a single-transistor type, which means that it is only composed of one active device, specifically a single MOSFET. The field-effect transistor has been around since the 1960s, initially developed as a replacement for the bipolar junction transistors in certain applications.

The working principle of a MOSFET is relatively straightforward. When a positive voltage from the gate is applied to the channel, a “gate-source” voltage is created, which allows for current to flow in between the source and drain. The flow of electrons is controlled by the voltage applied to the gate, which can either allow for more, less, or no current flow at all. This makes them ideal for use in devices where very precise control over the current flow is required. This includes things like power supplies and digital logic circuits.

The TK14C65W,S1Q is specifically designed for low-power applications, with a low on-resistance of only 3.2 ohms. This makes them ideal for use in devices where power consumption is a factor, such as portable electronics or even medical devices. The transistors are also capable of being switched on and off quickly, making them useful for pulse applications and logic circuits. The device also works well in DC circuits, as it has a low gate capacitance and low gate-source voltage.

The TK14C65W,S1Q transistor is particularly well suited for use in power transmission and conversion circuits, with its low on-resistance and high current handling capabilities. The low gate capacitance also makes it suitable for switching applications, such as high frequency inverters. The transistors are also used in devices where space is a concern, as they are physically small and easy to mount on circuit boards. Furthermore, they have excellent reliability and temperature-resistant capabilities.

The TK14C65W,S1Q transistors are becoming increasingly popular due to their versatility and affordability. They are also increasingly being used in more and more sophisticated applications, such as wireless communication and sensor networks. As such, these transistors are highly reliable and suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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