TK14C65W5,S1Q

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TK14C65W5,S1Q is a monolithic N-Channel MOSFET that features a low on-resistance and high breakdown voltage. This device is commonly used to switch power in a wide variety of applications such as switching power supplies, high-efficiency motor control, and automotive electronics. It’s also suitable for use in other low-voltage applications, as well as general switching.

The TK14C65W5,S1Q is constructed using advanced silicon gate MOS (Metal Oxide Semiconductor) technology. It combines the benefits of both BJTs (Bipolar Junction Transistors) and FET (Field Effect Transistors) technologies. It has an insulation film gate structure and exhibits low on-resistance values even at higher drain-source voltages. This ensures that the device provides reduced power consumption and low heat generation.

The device’s on-resistance is improved by the use of a high-density polysilicon gate structure that minimizes the need for adjustment. In addition, the channel is comprised of a special ultra-thin multi-layer oxide film that is tailored to enhance the on-resistance. As a result, this device has excellent performance characteristics that make it suitable for wide range of applications.

The TK14C65W5,S1Q works in the same manner as other MOSFETs. It utilizes an insulated gate terminal to control current flow between the source and drain. When the voltage applied to the gate is below the threshold voltage, the device is off and no current is allowed to flow. When the gate voltage rises above the threshold voltage, the device is turned on and current starts to flow through the channel.

The TK14C65W5,S1Q is able to handle high peak currents and high switch speeds and can operate at temperatures up to 150°C. This higher temperature operation means that the device can be used in a variety of high power and high temperature applications. Additionally, the device is extremely reliable and offers both long-term and short-term stability.

The TK14C65W5,S1Q can be used in a wide range of applications that require low on-resistance and high breakdown voltage. These include DC-DC converters, power distribution, motor control, and automotive electronics. The device is ideal for high voltage applications due to its excellent performance characteristics, including high reliability, fast switching speeds, and high peak currents. In addition, the device is low-cost and easily available.

To summarize, the TK14C65W5,S1Q is a monolithic N-Channel MOSFET that features low on-resistance and high breakdown voltage. It combines the benefits of both BJTs and FET technologies and is ideal for use in high voltage applications that require low on-resistance and high breakdown voltage. The device is constructed using advanced silicon gate MOS technology and offers high reliability, fast switching speeds, and high peak currents. The TK14C65W5,S1Q is suitable for a wide range of applications, including DC-DC converters, power distribution, motor control, and automotive electronics.

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