TK14A65W5,S5X Allicdata Electronics
Allicdata Part #:

TK14A65W5S5X-ND

Manufacturer Part#:

TK14A65W5,S5X

Price: $ 2.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 650V 13.7A TO-220
More Detail: N-Channel 650V 13.7A (Ta) 40W (Tc) Through Hole TO...
DataSheet: TK14A65W5,S5X datasheetTK14A65W5,S5X Datasheet/PDF
Quantity: 81
1 +: $ 2.11050
50 +: $ 1.69533
100 +: $ 1.54463
500 +: $ 1.25077
1000 +: $ 1.05487
Stock 81Can Ship Immediately
$ 2.32
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Function Transistors (FETs) are an important class of Semiconductor devices used in the field of Electronics. These devices work by controlling the flow of electrons within a circuit, allowing electrical signals to be processed or amplified. The model TK14A65W5,S5X is a type of FET specifically designed for high performance, low power applications.

The physical form of the TK14A65W5,S5X is similar to many other FETs. The device consists of a substrate and two metal contacts called source and drain. These are also known as the source electrode and the drain electrode, respectively. Overlying these two contacts is a thin layer of insulating material, usually silicon dioxide. This layer acts as a gate, regulating the flow of electrons between the source and drain. A negative or positive charge applied to the gate will determine if electrons are allowed to pass.

The most common applications for the TK14A65W5,S5X FET are in the amplification of small electrical signals. When connected to a driving circuit, the device takes a small input signal and amplifies it, allowing it to be used as an input for higher powered devices or to drive a different type of circuity. In this configuration, the device is known as a switch and can be used to control the operation of other parts of the circuit.

The TK14A65W5,S5X can also be used as a voltage regulator. In this configuration, the amount of current passed through the device is governed by the voltage applied to the gate. This type of control allows the voltage output by the device to be precisely adjusted without affecting the input signal. This property makes the TK14A65W5,S5X a popular choice for low power applications such as solar cell regulation circuits.

The TK14A65W5,S5X is capable of operating at frequencies up to 1 MHz. This makes it useful for applications such as RF circuits, where low noise and low power consumption are necessary. The FET can also be used in audio filter circuits, providing attenuation of selected frequencies from an audio signal.

As with all FETs, the TK14A65W5,S5X requires a certain amount of manual tuning to operate correctly in different circuit configurations. This tuning process involves adjusting the electrical characteristics of the device to ensure optimal performance. Common adjustments include the threshold voltage, the gate capacitance and the gate leakage current, which can be adjusted manually or by using a calibration software program.

Overall, the TK14A65W5,S5X is a high performance, low power FET that is suitable for a variety of applications. Its adjustable electrical characteristics make it easy to customize for specific projects and its ability to operate at high frequencies makes it ideal for RF and audio filtering tasks.

The specific data is subject to PDF, and the above content is for reference

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