Allicdata Part #: | TK14E65WS1X-ND |
Manufacturer Part#: |
TK14E65W,S1X |
Price: | $ 2.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 650V 13.7A TO-220 |
More Detail: | N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole T... |
DataSheet: | TK14E65W,S1X Datasheet/PDF |
Quantity: | 5 |
1 +: | $ 2.21760 |
10 +: | $ 2.00403 |
100 +: | $ 1.61059 |
500 +: | $ 1.25266 |
1000 +: | $ 1.03792 |
Vgs(th) (Max) @ Id: | 3.5V @ 690µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 6.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.7A (Ta) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK14E65W S1X is a single field effect transistor (FET) commonly used in transistors and other components. It is a type of semiconductor circuits that rely on an electric field to control the flow of current within them. This type of transistor is used in a range of applications, including amplification, voltage regulation and more.
A field effect transistor works by utilizing an electric field in order to control the flow of electrons within a semiconductor device. In the case of the TK14E65W S1X, the electric field is produced by a gate electrode which is situated at the top of the device. This gate is then connected to a voltage source and this voltage source is used to alter the electric field which is present within the device. When a voltage is applied to the gate, it causes the electric field to spread across the channel which is located between the source and drain electrodes at the bottom of the device. This then increases the electrical conductivity of the channel and allows current to flow through it.
The most common application of a TK14E65W S1X FET is in amplifiers, where it can be used to amplify signals. This is done by applying a small amount of current to the gate which then affects the electric field within the device. By altering this electric field, the current that is able to flow through the device can be increased or decreased in a controlled manner. This then allows the output to be amplified, as only the desired frequencies are allowed to pass through the device.
The TK14E65W S1X can also be used as a voltage regulator, as it can limit the amount of current that is allowed to flow through it. This is done by manipulating the electric field in the device and increasing or decreasing the resistance of the channel. This can be used to regulate the voltage across a circuit, for example, the voltage at the output of the device can be regulated by manipulating the electric field in the device.
The TK14E65W S1X is also used in a range of other applications such as switching, logic circuitry and more. It is a highly versatile transistor, which can be used in a variety of applications, from amplifiers to voltage regulators. Its success can be attributed to its ability to efficiently manipulate electric fields, allowing for accurate and efficient control of current.
The specific data is subject to PDF, and the above content is for reference
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