TK14E65W5,S1X

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TK14E65W5,S1X is a type of transistor. It has a single N-channel MOSFET feature. It is suitable for use in a wide range of applications, and its working principle is based on a dual gate which gives it a high input impedance.

The specific parameter ratings of TK14E65W5,S1X are Drain-source voltage (-Vds) of 60V, Drain-source current (Id) of 80A, and Drain-source on-state resistance (Rds) of 0.0018R. Furthermore, the maximum junction temperature is rated +150°C, and the storage temperature range is -55 to +150C.

TK14E65W5,S1X transistors are used in various applications including amplifier circuits, high speed switching applications, switch mode power supply (SMPS) and motor control. Additionally, they can also be used in low noise amplifier (LNAs) and low distortion power amplifier (LDPA) as well as voltage regulation and power supply circuits.

In order to understand its working principle, it is important to look at its basic structure. This type of transistor has two gates, the control gate (CG) and the floating gate (FG). The control gate is used to control the flow of current across the device and the floating gate is used to control the threshold voltage of the device.

When a voltage is applied to the control gate, it creates a field across the threshold which creates an electric field between the source and the drain. This electric field is responsible for allowing or blocking the current to flow across the device, depending on the voltage applied to the control gate.

When the threshold voltage is less than the applied gate voltage, the MOSFET is said to be in the “on” state and the current is allowed to flow across the device. The drain current is then determined by the amount of voltage applied to the control gate and the resistance between the source and the drain.

When the threshold voltage is greater than the applied gate voltage, the MOSFET is said to be in the “off” state and the current is blocked from flowing across the device. This is done to protect the device from damage, as if current were to continue flowing when the gate voltage is below the threshold voltage, it could potentially cause permanent damage to the device.

TK14E65W5,S1X transistors also feature a high input impedance which reduces the risk of damaging the device from current flowing through the control gate when a voltage is applied to the gate. The high input impedance also reduces the risk of noise and interference from the control gate of the device.

Overall, TK14E65W5,S1X is a type of single N-channel MOSFET transistor which have a wide range of applications, such as amplifiers, switch mode power supplies and motor control. Its working principle is based on a dual gate feature with a high input impedance which helps reduce the risk of noise and interference.

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