TN0604N3-G-P005

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TN0604N3-G-P005 is a P-channel Surface Mounted Technology (SMT) Power MOSFET designed for general purpose low power switching applications. It is a semiconductor device that uses voltage to control the flow of current sourced from a gate electrode. The device is applied in devices that require higher current load such as DC-DC converters, off line adapters, notebook computers, and battery-powered radio frequency (RF) devices.

The TN0604N3-G-P005 are primarily designed for low voltage, low power applications. It has an operating voltage of 20V and a drain current of 7A. This product is provided in the SOT package, has enhanced ESD capability and is suitable for operation in a wide range of environmental conditions.

This device is a type of MOSFET (metal–oxide–semiconductor field effect transistor). MOSFETs are insulated-gate field effect transistors that are capable of switching very high currents with very little power loss. A MOSFET consists of three main parts: gate, drain, and source. Generally, a MOSFET has a gate region of p-type and n-type materials, a source region of pure n-type material, and a drain region of pure p-type material. The operation of the MOSFET is determined by the type of material and how it is arranged.

When the gate region is left unbiased, it acts as an insulator. This prevents current flowing through the MOSFET. When a positive voltage (VDS) is applied to the gate region, a channel of electrons is created, allowing current to flow through the MOSFET. This is called the on-state of the MOSFET. This can be further adjusted by varying the voltage applied to the gate region. If a negative voltage (VSS) is applied to the gate conductor, the electrons are repelled from the channel and a depletion region is created, preventing current from flowing through the MOSFET. This is called the off-state of the MOSFET. This is the main advantage of MOSFETs over standard bipolar transistors, as MOSFETs do not require a large amount of current to turn them on or off, reducing power dissipation.

The TN0604N3-G-P005 is a P-channel MOSFET engineered to reduce switching loss in various applications including DC/DC converters, voltage inverters, and signal switch. It is also suitable for switching applications and provides low on-state resistance, fast switching speed, and high-frequency operation.

In summary, the TN0604N3-G-P005 is an excellent choice for power MOSFET applications. It is an easy-to-use device tailored for low voltage, low power applications. It provides high switching speed, low on-state resistance and enhanced ESD protection.

The specific data is subject to PDF, and the above content is for reference