TN0606N3-G Allicdata Electronics
Allicdata Part #:

TN0606N3-G-ND

Manufacturer Part#:

TN0606N3-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 60V 500MA TO92-3
More Detail: N-Channel 60V 500mA (Tj) 1W (Tc) Through Hole TO-9...
DataSheet: TN0606N3-G datasheetTN0606N3-G Datasheet/PDF
Quantity: 515
Stock 515Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The TN0606N3-G is one of the many available types of transistors and FETs (field effect transistors). Specifically, it is a single MOSFET (metal-oxide semiconductor FET) designed for use in high-frequency, low-power applications. The TN0606N3-G is ideal for applications requiring high-speed switching and low dissipation.

MOSFETs are one of the most widely used types of semiconductor devices in the electronics industry. They are capable of performing a variety of tasks, from acting as switches and amplifiers, to more complex applications such as digital logic circuits and memory architectures. Generally speaking, MOSFETs offer a variety of advantages over traditional bipolar junction transistors (BJTs), including lower power consumption, higher switching speeds, and scalability.

MOSFETs use the principle of controlling electric current flow between two terminals, known as “source” and “drain”. The source is the part of the MOSFET that supplies the electric current, while the drain is the part of the device that receives the current and allows it to flow. The “gate”, located between the source and drain, is the part of the device used to control the amount of current flowing between the two terminals. This gate voltage is used to open and close the electric current flowing between the source and drain and is usually a voltage near ground, such as 0V.

The TN0606N3-G MOSFET is designed for use in applications requiring high-frequency signals and low power consumption. This device is ideal for applications where fast switching speeds are required, such as frequency converters, switching power supplies, and motor control circuits. It also has excellent power-handling capabilities, making it suitable for applications where high current or voltage switching is necessary.

The maximum power dissipation of the TN0606N3-G is 500mW, making it ideal for medium and low-power applications. It is also rated for an operating temperature range from -55°C to +150°C, and is rated for an operating voltage of up to 50V. Additionally, the device features both drain and source pins for easy connection. The TN0606N3-G is designed for a variety of applications, but is particularly suited for switching high-frequency signals in low-power circuits.

In summary, the TN0606N3-G is an ideal device for low-power, high-frequency applications. It offers a variety of benefits, including low power consumption, excellent power handling capabilities, fast switching speeds, and a wide operating temperature range. This device is suitable for a variety of electronic applications, including frequency converters, switching power supplies, and motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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