TN0604N3-G

Vgs(th) (Max) @ Id:	1.6V @ 1mA
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	740mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	190pF @ 20V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	750 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	700mA (Tj)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Bulk

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TN0604N3-G Application Field and Working Principle TN0604N3-G is a type of power MOSFET (metal oxide semiconductor field effect transistor) with a high power switch and low on-resistance for use in a wide range of AC and DC applications. This MOSFET has a wide range of applications, including in automotive, consumer, industrial, medical and military industries. It is also suitable for use in consumer and medical products. This article will discuss the application field and working principle of the TN0604N3-G MOSFET.The TN0604N3-G MOSFET is a single-channel, discrete device that is available in a range of packages, including Sot23-3, Sip9 and SOT223. It is designed to offer high performance in applications that require a high power switch, such as motor control, power converters, power switches and H-bridge circuits. The device has a maximum on-resistance of 15.8 mΩ at 10V and can handle up to 50V and 6A of current. It also offers a high dielectric breakdown voltage of 400V, a high level of EMI suppression and a low insertion loss. The TN0604N3-G MOSFET features Enhanced Current Sensing (ECS) technology, which makes it possible to measure the current directly in the FET. This technology helps to reduce power losses and reduce power consumption. It also offers an increased robustness and reliability for safety critical applications. The TN0604N3-G MOSFET is also suitable for use in self-powered power switches, high power converters, mobile power amplifiers, lighting control, and power supplies. The device is also used in automotive, medical and military applications since it can operate in a wide temperature range (-40°C to +125°C). Now let’s discuss the working principle of the TN0604N3-G MOSFET. It is a type of unipolar transistor that utilizes a four layer structure consisting of source, gate, drain and body connections. The gate terminal is insulated from the rest of the structure, allowing the electric field generated by the gate to control the current flow between the source and drain terminals. When a positive voltage is applied to the gate terminal, it induces an electric field in the structure that attracts electrons towards the gate. This creates a conductive channel between the source and gate terminals, thus allowing current to flow. When the voltage on the gate terminal is reduced, the electrons are repelled and the conductive channel closes. The TN0604N3-G MOSFET also features a high blocking voltage, which enables it to quickly switch on and off without any potential damage. This feature also makes it ideal for use in high current applications. In conclusion, the TN0604N3-G MOSFET is a single-channel, discrete device that is designed to offer high performance in a wide range of AC and DC applications. The device has a maximum on-resistance of 15.8 mΩ at 10V and can handle up to 50V and 6A of current. It also features Enhanced Current Sensing (ECS) technology and a high level of EMI suppression, making it suitable for use in a wide range of applications, including automotive, consumer, industrial, medical and military. It also features a high blocking voltage and a low insertion loss, making it ideal for use in high current applications.

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