TN0620N3-G

Vgs(th) (Max) @ Id:	1.6V @ 1mA
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	250mA (Tj)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Bulk

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TN0620N3-G is a wideband N-Channel enhancement mode field effect transistor (FET) that is produced by Toshiba. It is a cost effective design that is normally used to enhance high frequency applications. In these applications, TN0620N3-G is an ideal solution for applications where low capacitance, low voltage and low distortion are important.TN0620N3-G is a dual-gate enhancement mode FET that works in the same way as an N-Channel Enhancement Mode FET. This type of FET works by having a transistor\'s gate biased to a voltage greater than its source or drain, thus allowing current flow from source to drain with minimum resistance. The gate bias can also be adjusted by connecting it to a voltage source, allowing for current control. The gate bias voltage also defines the operating temperature range of TN0620N3-G; so, this device is designed to be very efficient when operating at temperatures below 75 degrees Celsius.The advantages of TN0620N3-G are numerous. First, its wideband operation means that it can be used in applications that require fast switching frequency. This wideband operation also allows the device to be used in a wide range of frequencies and applications. Furthermore, its low capacitance leads to improved signal integrity and reduced distortion. In addition, its low voltage capability allows for low-voltage operation in some applications.The working principle of TN0620N3-G is relatively simple. When the gate bias is greater than the source, the device is in an "ON" state and current is allowed to flow from the source to the drain. If the gate voltage is decreased, the device will turn "OFF" and the current will stop. Since the gate bias defines the operating temperature of the device, it can be easily adjusted to the desired operating temperature, thus allowing for improved efficiency.In conclusion, TN0620N3-G is an excellent choice for applications that require a wideband N-Channel enhancement mode FET. Its wideband operation makes it an ideal solution for applications where low capacitance, low voltage and low distortion are important. Furthermore, its working principle is relatively simple and allows for easy adjustment of the device\'s gate bias.

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