TN0604N3-G-P013 Allicdata Electronics
Allicdata Part #:

TN0604N3-G-P013-ND

Manufacturer Part#:

TN0604N3-G-P013

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 40V 700MA TO92-3
More Detail: N-Channel 40V 700mA (Tj) 740mW (Ta) Through Hole T...
DataSheet: TN0604N3-G-P013 datasheetTN0604N3-G-P013 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 740mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Box (TB) 
Description

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TN0604N3-G-P013 is a MOSFET, one of the oldest and most common type of FETs (field effect transistors) designed for the electrical and electronics industry. The TN0604N3-G-P013 is an N-channel enhancement mode MOSFET and is commonly used in a wide range of applications such as power management circuits for processors and other data and communications applications. The MOSFET is essential to producing efficient and reliable circuitry, making them vital components to any electronics production.

The MOSFET is a three-terminal semiconductor device that consists of a source and drain (source and drain) and a gate. The source and drain are connected to the positive and negative power supply, respectively, while the gate is insulated from these two terminals and is used to control the flow of current. The MOSFET is an enhancement mode device, meaning that in order to start the current flow, the voltage must be increased to a certain threshold level, known as the threshold voltage. Once the voltage has reached this level, the current can be continuously increased by further increasing the voltage.

The TN0604N3-G-P013 MOSFET is a single N-channel device, meaning that it has only one layer of silicon as a dielectric between its gate and its source and drain. This layer of dielectric allows for extremely high-speed switching, making the MOSFET one of the most efficient components in terms of power efficiency. The device also offers a high drain-source isolation voltage, meaning that the voltage between its source and drain is kept stable and can handle much higher voltages without being affected.

The TN0604N3-G-P013 MOSFET is an excellent choice for a range of applications. These include power management circuits for processors, data and communications applications, industrial drive control, and automotive systems. The device is also used in motor control, power supply, motor drive, and in high-frequency switching for lightings, optoelectronics, displays, and mobile charger applications.

In terms of its working principle, the TN0604N3-G-P013 operates like a switch, allowing current to pass through when the transistor is activated. When the gate is at a low potential, the NM0604N3-G-P013 acts like an open switch, preventing current from passing through and blocking the flow of current. When the voltage is increased to a certain threshold level, the transistor is activated and current can pass through the channel, allowing for efficient and reliable circuitry.

The TN0604N3-G-P013 is also highly reliable, making them an ideal choice for demanding applications. With its high voltage rating and robust performance, the device is sure to be a great addition to any project.

The specific data is subject to PDF, and the above content is for reference

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