Allicdata Part #: | TN0610N3-G-ND |
Manufacturer Part#: |
TN0610N3-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 100V 500MA TO92-3 |
More Detail: | N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-... |
DataSheet: | TN0610N3-G Datasheet/PDF |
Quantity: | 502 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Tj) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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FETs (Field Effect Transistors) are unipolar transistors with three terminals which are the source, drain and gate. In most FETs, the gate is insulated from the rest of the transistor and is used to control the flow of electrons or holes from the source to the drain. The TN0610N3-G is a single MOSFET that offers the flexibility of being able to be used in many applications.
The TN0610N3-G is considered a non-logic (N-channel) MOSFET. It is a high transconductance device with low forward gate-source resistance and low input capacitance. It is a 3-terminal device with a gate-source voltage of up to 5.5V. The maximum drain current is rated at 10A and the maximum drain-source voltage is 30V.
Due to its low VGS noise and high drain current, it is ideal for use in a variety of switching applications including motor controls and power switches. It is also suitable for switching applications in high voltage DC to DC converters, AC and DC circuits, as well as variable speed motor control applications. The TN0610N3-G can be used as a load switch, independent power supply switch, and high current DC line switch. It also offers good on-state performance, improved EMI and reverse energy dissipation.
The TN0610N3-G is a voltage-controlled device. This means that the output state depends on the voltage level at the gate. When the gate voltage is a positive voltage, the device is “on” and the drain-source voltage is a low voltage. Conversely, when the gate voltage is a negative voltage, the device is “off”, and the drain-source voltage is a high voltage. The application of an appropriate gate voltage will determine the drain-source voltage state.
By using a series of resistors, the gate-source voltage can be set, allowing the user to control the amount of current flowing through the device. When the gate voltage is varied, the resistance of the TN0610N3-G will vary accordingly, allowing the required amount of current to flow under different conditions. This makes it an ideal choice for inverters, switching power supplies, or any application where a constantly varying current or voltage is required.
The TN0610N3-G has a variety of features that make it an attractive choice for various applications. It offers high efficiency and fast switching times, low on-resistance, low input capacitance, low gate charge, and wide operating temperature ranges. Additionally, its low power consumption, wide power supply range, and high temperature operating range make it a great choice for automotive, industrial, and consumer electronics applications.
In conclusion, the TN0610N3-G is a great choice for many applications due to its low VGS noise, low on-resistance, fast switching times, and low gate charge. Its wide operating temperature range, wide power supply range, and high temperature operating range make it an ideal choice for many power applications as well as consumer and industrial applications. Thus, the TN0610N3-G is an excellent choice for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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