TN0620N3-G-P002 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.6V @ 1mA
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	250mA (Tj)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TN0620N3-G-P002 Application Field and Working Principle

TN0620N3-G-P002 is a type of transistor belonging to the family of Field Effect Transistors (FETs) and Metal–Oxide–Semiconductor field-effect transistors (MOSFETs). TN0620N3-G-P002 is a type of single gate FET and MOSFETs designed to provide optimal performance in applications requiring low voltage and low power – consuming devices. The performance benefits of this type of FET and MOSFET are derived from its construction which has four primary sections: the gate, the source, the drain, and the body.

Gate

The gate of TN0620N3-G-P002 is a plate structure comprised of an electrode material in contact with the semiconductor material. When a voltage is applied to the gate, an electric field is created that repels electrons in the region between the gate and the source. This repulsion makes it more difficult for electrons to move through this region, resulting in increased resistance in the FET or MOSFET.

Source and Drain

The source and the drain are two additional electrodes which are connected to one another by a conductive path. The source is the negative terminal and the drain is the positive terminal of the device. When a voltage is introduced into the two electrodes, it results in a continuous current flow from the source to the drain. This current is known as source-to-drain current, or Id.

Body

The body region of TN0620N3-G-P002 is the semiconductor region beneath the gate. The impurity concentration and mobility of this region is the main factor controlling the mode of operation of the device. In enhancement mode (E-mode) FETs, the channel is open only when a positive voltage is applied to the gate, while in depletion mode (D-mode) FETs, a negative potential at the gate will open the channel.

Working Principle

When a voltage is applied to the gate, an electric field is created which repels electrons in the region between the gate and the source, thus increasing resistance in the FET. This increase in resistance is utilized to either permit or block the flow of current from the source to the drain.In FETs and MOSFETs, the source-to-drain current is a function of the gate-to-source voltage (Vgs) and the drain-to-source voltage (Vds). When the Vgs exceeds a certain threshold voltage (Vth) value, the channel will become conductive and current will flow from the source to the drain. This is what is termed as the enhancement mode (E-mode). Conversely, when the Vgs is less than the threshold voltage (Vth), the channel will be completely blocked. This is called the depletion mode (D-mode).

Application Field

TN0620N3-G-P002 is primarily used in applications which require low voltage and low power – consuming devices. Typical applications for FETs and MOSFETs include power supplies, DC-DC converters, amplifier circuits, switching circuits, and signal processing. FETs and MOSFETs can also be used in a variety of other applications such as voltage regulators, motor drivers, and mobile device applications.TN0620N3-G-P002 is also used in advanced applications such as smart grid devices and Automotive Electronic Control Units (ECUs). In advanced applications, FETs are used to provide digital control over the devices and systems that they enable. FETs can also be used in RF (Radio Frequency) applications to provide greater control and improved performance over other technologies such as bipolar junction transistors.

Conclusion

In summary, TN0620N3-G-P002 is a type of FET and MOSFET designed for applications requiring low voltage and low power – consuming devices. When a voltage is applied to the gate of TN0620N3-G-P002, electrons are repelled in the region between the gate and the source, resulting in increased resistance in the FET or MOSFET. TN0620N3-G-P002 is primarily used in applications such as power supplies, DC-DC converters, amplifier circuits, switching circuits, signal processing, voltage regulators, motor drivers, and mobile device applications. It is also used for advanced applications such as smart grid devices and Automotive Electronic Control Units (ECUs) in order to provide enhanced performance compared to other technologies.

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