Allicdata Part #: | TN0610N3-G-P013-ND |
Manufacturer Part#: |
TN0610N3-G-P013 |
Price: | $ 0.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 100V 500MA TO92-3 |
More Detail: | N-Channel 100V 500mA (Tj) 1W (Tc) Through Hole TO-... |
DataSheet: | TN0610N3-G-P013 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.50614 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 750mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Tj) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Box (TB) |
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TN0610N3-G-P013 belongs to the category of transistors-field effect transistors-single. It is a N-Channel Enhancement Mode MOSFET with high dense design, single gate and three drain pins. The device has a maximum breakdown voltage of 40 V, on-state resistance of 0.63 Ohm, Gate threshold voltage of 2 V and Drain current of 4.2 A.
TN0610N3-G-P013 is a kind of switch device used to control the current flow in electric circuits. It is used in various applications such as signal switches, audio amplification, power switches and motor control. The working principle of TN0610N3-G-P013 is based on the principle of quantum tunneling effect. When electric field is applied to its gate terminal, the electrons in the drain region will tunnel through its oxide layer and enter into the channel. This tunneling current changes the threshold voltage of the device. When the voltage at the gate exceeds the threshold voltage, the current flowing in the channel increases and the device is turned on.
TN0610N3-G-P013 is commonly used in switching applications such as load control and DC-DC converters. It is also commonly used in low side switching applications, where the drain is connected to the ground and the source is connected to the load. This device can be used to control the current in the circuit by varying its gate voltage and can be used to switch the power on and off in a circuit.
TN0610N3-G-P013 is also commonly used in high side switching applications, where the source is connected to the power supply and the drain is connected to the load. This device can be used to control the current in the circuit by adjusting its gate voltage and can be used to switch the power on and off in a circuit. This device also has the advantage of better noise immunity and electrostatic discharge protection compared to other MOSFETs.
TN0610N3-G-P013 can be used in applications that require fast switching and efficient operation over a wide range of operating temperature. It is also commonly used in applications such as relay, power diodes and low on-state resistance devices. This device can also be used in automotive electronics, where it is used as a power switch to control the power supply.
TN0610N3-G-P013 is also used in consumer electronic appliance such as TVs and LCD displays, where it is used as a switching device to control the power supplied to the appliance. It is also used in various home appliances such as air conditioning, refrigerators, washing machines and dryers.
In conclusion, TN0610N3-G-P013 is a N-Channel Enhancement Mode MOSFET with a high dense design, single gate and three drain pins. It is used in various applications requiring fast switching and efficient operation, such as load control, DC-DC converters, low side switching, high side switching and relay applications. It is also commonly used in consumer electronic appliances such as TVs and LCD displays, as well as for a variety of home appliances. This device is designed for high reliability and excellent performance.
The specific data is subject to PDF, and the above content is for reference
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