XN0150400L Allicdata Electronics

XN0150400L Discrete Semiconductor Products

Allicdata Part #:

XN0150400LTR-ND

Manufacturer Part#:

XN0150400L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS 2NPN 20V 0.3A MINI5
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 30...
DataSheet: XN0150400L datasheetXN0150400L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 4mA, 2V
Power - Max: 300mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: Mini5-G1
Description

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XN0150400L is a monolithic integrated circuit contains 8 high-performance transistors in a 16 lead plastic package. It belongs to a group of Transistors - Bipolar (BJT) - Arrays. Designed with Darlington connection, it is ideal for driving high-current ground-referenced loads such as motor and makes low-noise amplifier possible.

Regarding its application field, these components are mainly applied for printer, copier, CCD camera, X-ray film processor, amplifier, and DC motor drive. XN0150400L can also be found in industry equipment such as relays, control and valve actuation, voltage regulators, solenoid and lamp control. In remote sensing instrument, it also performs as an adapter, which can represent imaging instructions as electrical or optical signals to a host computer.

In terms of structure and working, XN0150400L is constructed by combining two high voltage transistors in a Darlington configuration. Based on electrical theory, such structure holds the following features: high DC current gain, low collector-emitter saturation voltage and short switching times. The feet of each transistor are kept apart to allow better thermal control and higher current handling capability.

Moreover, this component applies a double collector structure with two collectors connected to its external pins. In comparison with the single structure, this two-collector design offers features such as better output current drive, lower power dissipation, easier thermal design and higher system reliability.

When this component is powered on, the biasing voltage applied to the base of the first transistor in the array will cause the transistor to turn on. This action will activate the second transistor, thus allowing current to flow from collector to emitter of the Darlington array. The current will then be taken out through the external pins for out-of-the-component applications.

XN0150400L exhibits outstanding performances in a wide range of applications. It provides fast switching time, high output current, high voltage and power capacity, flexibility of operations as well as enhanced reliability and durability. With a wide set of advantages, this component is able to meet the demands of changing consumer requirements and emerging technologies.

The specific data is subject to PDF, and the above content is for reference

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